Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate

This paper investigates the origin of the diffusion process responsible for the optical degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of a series of constant-current stress experiments carried out at different temperatures, we were able to quantitatively ev...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2022-01, Vol.28 (1: Semiconductor Lasers), p.1-9
Hauptverfasser:	Buffolo, Matteo, Lain, Federico, Zenari, M., Santi, Carlo De, Norman, Justin, Bowers, John E., Herrick, Robert W., Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Format:	Artikel
Sprache:	eng
Schlagworte:	beryllium Crystal defects Degradation Diffusion diffusion processes Engineering Enhanced diffusion Epitaxial growth High temperature Optical devices Optical variables measurement Optics Physics Quantum dot lasers Quantum dots Radiative recombination reliability Semiconductor lasers Silicon Silicon substrates Stress Temperature measurement
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