Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications
Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter r...
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| Veröffentlicht in: | Nano letters 2023-04, Vol.23 (7), p.2816-2821 |
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| container_issue | 7 |
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| container_title | Nano letters |
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| creator | Chen, Kuan-Yu Tripathy, Prabhat K. Mondal, Kunal Zhang, Hongliang Couet, Adrien Andrews, Joseph B. |
| description | Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 1016 ion/cm2 at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments. |
| doi_str_mv | 10.1021/acs.nanolett.3c00112 |
| format | Article |
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By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 1016 ion/cm2 at 873 K. 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| source | American Chemical Society Journals |
| subjects | diodes harsh environments irradiation manufacturing NANOSCIENCE AND NANOTECHNOLOGY nanowires radiation Schottky diodes silicon carbide solution processed |
| title | Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications |
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