Photoluminescence spectroscopy of Cr 3+ in β-Ga 2 O 3 and (Al 0.1 Ga 0.9 ) 2 O 3

Alloying β-Ga 2 O 3 with Al 2 O 3 to create (Al x Ga 1− x ) 2 O 3 enables ultra-wide bandgap materials suitable for applications deep into ultraviolet. In this work, photoluminescence (PL) spectra of Cr 3+ were investigated in monoclinic single crystal β-Ga 2 O 3 , and 10 mol. % Al 2 O 3 alloyed with β-Ga 2 O 3 , denoted β-(Al 0.1 Ga 0.9 ) 2 O 3 or AGO. Temperature-dependent PL properties were studied for Cr 3+ in AGO and β-Ga 2 O 3 from 295 to 16 K. For both materials at room temperature, the red-line emission doublet R 1 and R 2 occurs at 696 nm (1.78 eV) and 690 nm (1.80 eV), respectively, along with a broad emission band at 709 nm (1.75 eV). The linewidths for AGO are larger for all temperatures due to alloy broadening. For both materials, the R-lines blue-shift with decreasing temperature. The (lowest energy) R 1 line is dominant at low temperatures due to the thermal population of the levels. For temperatures above ∼50 K, however, the ratio of R 2 to R 1 peak areas is dominated by nonradiative combination.