InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

We report on the one-dimensional (1D) heteroepitaxial growth of InxGa1-xAs (x = 0.2–1) nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using metalorganic chemical vapor deposition (MOCVD) without catalysts or masks. The epitaxial growth takes place spontaneously p...

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Veröffentlicht in:	Nano letters 2011-11, Vol.11 (11)
Hauptverfasser:	Shin, Jae Cheol, Kim, Kyou Hyun, Yu, Ki Jun, Hu, Hefei, Yin, Leijun, Ning, Cun-Zheng, Rogers, John A., Zuo, Jian-Min, Li, Xiuling
Format:	Artikel
Sprache:	eng
Schlagworte:	electrical conductivity epitaxy heterogeneous integration III-V on Si InAs nanowire indium arsenide InGaAs nanowire NANOSCIENCE AND NANOTECHNOLOGY nanowire nanowire arrays silicon solar cell
Online-Zugang:	Volltext
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