Persistent Room-Temperature Photodarkening in Cu-Doped β-Ga2O3

Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped beta-Ga2O3 to UV light > 4 eV is shown to cause larg...

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Veröffentlicht in:	Physical review letters 2022-02, Vol.128 (7)
Hauptverfasser:	Jesenovec, J., Pansegrau, C., McCluskey, M. D., McCloy, J. S., Gustafson, T. D., Halliburton, L. E., Varley, J. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Doped semiconductors Electron paramagnetic resonance Fourier transform infrared spectroscopy MATERIALS SCIENCE Optical absorption spectroscopy Semiconductor compounds Wide band gap systems
Online-Zugang:	Volltext
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