Analysis of the dependence of critical electric field on semiconductor bandgap

Understanding of semiconductor breakdown under high electric fields is an important aspect of materials’ properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field ( E crit ) at which the...

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Veröffentlicht in:	Journal of materials research 2022-02, Vol.37 (4), p.849-865
Hauptverfasser:	Slobodyan, Oleksiy, Flicker, Jack, Dickerson, Jeramy, Shoemaker, Jonah, Binder, Andrew, Smith, Trevor, Goodnick, Stephen, Kaplar, Robert, Hollis, Mark
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied and Technical Physics Biomaterials Chemistry and Materials Science Doping Electric fields Electronic devices Energy gap Inorganic Chemistry Invited Feature Paper-Review Materials Engineering Materials research Materials Science Nanotechnology
Online-Zugang:	Volltext
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