Using electron channeling contrast imaging to inform and improve the growth of high-efficiency GaAs solar cells on nanopatterned GaAs substrates

•Reactive ion etching during patterning damages substrate and causes stacking faults.•Macroscopic patterning flaws cause device performance issues due to shunting.•ECCI shows no crystalline defects due to coalescence over patterned substrates.•Patterning process optimization and substrate cleaning r...

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Veröffentlicht in:	Journal of crystal growth 2022-03, Vol.581, p.126490, Article 126490
Hauptverfasser:	Mangum, John S., Theingi, San, Neumann, Anica N., McMahon, William E., Warren, Emily L.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystalline defects A1. Electron Channeling Contrast Imaging A3. Metalorganic vapor phase epitaxy A3. Selective epitaxy B2. Semiconducting III-V materials B3. Solar cells Channeling Crystal defects crystalline defects Crystallography Damage Efficiency electron channeling contrast imaging Energy conversion efficiency Gallium arsenide Hydrogen peroxide MATERIALS SCIENCE metalorganic vapor phase epitaxy Photovoltaic cells Quality assessment Reactive ion etching selective epitaxy semiconducting III-V materials Solar cells SOLAR ENERGY Spalling Stacking faults Substrates Threading dislocations
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