Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

[Display omitted] This paper reviews materials challenges and recent progress for selective area regrowth and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize randomly placed, reliable, contactable, and generally useable laterally patterned p-n junctions, which are...

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Veröffentlicht in:	Materials today (Kidlington, England) England), 2021-10, Vol.49 (C), p.296-323
Hauptverfasser:	Fu, Houqiang, Fu, Kai, Yang, Chen, Liu, Hanxiao, Hatch, Kevin A., Peri, Prudhvi, Herath Mudiyanselage, Dinusha, Li, Bingjun, Kim, Tae-Hyeon, Alugubelli, Shanthan R., Su, Po-Yi, Messina, Daniel C., Deng, Xuguang, Cheng, Chi-Yin, Vatan Meidanshahi, Reza, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Armstrong, Andrew M., Allerman, Andrew A., Yu, Edward T., Han, Jung, Goodnick, Stephen M., Smith, David J., Nemanich, Robert J., Ponce, Fernando A., Zhao, Yuji
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium nitride interface engineering Power electronics Selective area doping and regrowth Vertical power devices
Online-Zugang:	Volltext
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