Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycry...

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Veröffentlicht in:	Solar energy materials and solar cells 2021-10, Vol.231, p.111325, Article 111325
Hauptverfasser:	Oklobia, O., Kartopu, G., Jones, S., Siderfin, P., Grew, B., Lee, H.K.H., Tsoi, W.C., Abbas, Ali, Walls, J.M., McGott, D.L., Reese, M.O., Irvine, S.J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorbers Arsenic As doping Cadmium Cadmium selenides Cadmium tellurides Cd(Se,Te) CdSe CdSexTe1-x CdTe Crystal structure Current density Diffusion layers Diffusion length Doping Emitters Interdiffusion Intermetallic compounds Mass spectroscopy Metalorganic chemical vapor deposition MOCVD Optical properties Optimization Organic chemicals Organic chemistry Photoluminescence Photons Photovoltaic cells Photovoltaics Secondary ion mass spectroscopy Selenium Solar cells SOLAR ENERGY Spectrum analysis Tellurium Ternary alloys Thin film Thin films
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