Heteroepitaxy of Dirac semimetal Cd3As2 by metal-organic chemical-vapor deposition

•First growth of Dirac semimetal Cd3As2 by metalorganic chemical vapor deposition.•Films are 5–75 nm thick and consist of epitaxially oriented, coalesced polycrystals.•Well-optimized films exhibit rms surface roughnesses as low as 1.0 nm.•X-ray studies reveal a thin-film crystallographic structure c...

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Veröffentlicht in:	Journal of crystal growth 2021-10, Vol.572 (C), p.126230, Article 126230
Hauptverfasser:	Tait, C.R., Lee, S.R., Deitz, J.I., Rodriguez, M.A., Alliman, D.L., Gunning, B.P., Peake, G.M., Sandoval, A., Valdez, N.R., Sharps, P.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Characterization A1. High resolution x-ray diffraction A3. Metalorganic chemical vapor deposition A3. Metalorganic vapor phase epitaxy B1. Cadmium compounds B2. Semiconducting cadmium compounds Buffer layers cadmium compounds characterization Compressive properties Crystal structure Film thickness Gallium antimonides high resolution x-ray diffraction Indium arsenides Metalloids Metalorganic chemical vapor deposition metalorganic vapor phase epitaxy Microstructure Optimization Organic chemicals Organic chemistry Polycrystals semiconducting cadmium compounds Substrates Surface roughness Tensile strain Thin films X ray imagery
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