Gas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition

Experiments and numerical simulations have been conducted to determine critical parameters for growth of polycrystalline silicon via hot-wire chemical vapor deposition. Reactor-scale simulations performed using the Direct Simulation Monte Carlo (DSMC) method have revealed a number of important pheno...

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Veröffentlicht in:	Thin solid films 2001-09, Vol.395 (1-2), p.29-35
Hauptverfasser:	Holt, J.K, Swiatek, M, Goodwin, D.G, Muller, R.P, Goddard, W.A, Atwater, Harry A
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Direct simulation Monte Carlo Exact sciences and technology Hot-wire chemical vapor deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Nucleation kinetics Physics Theory and models of film growth Threshold ionization mass spectrometry
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