Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Nonpolar GaN demonstrates a significant potential for application in the field of light-emitting diodes, polarization sensitive detectors, etc. However, the achievement of the high-quality nonpolar GaN epitaxial films still faces significant challenges. In this study, the high-quality nonpolar a-pla...

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Veröffentlicht in:Vacuum 2020-12, Vol.182 (C), p.109687, Article 109687
Hauptverfasser: Liang, Jinghan, Yang, Yuhui, Kong, Deqi, Song, Zhibang, Wang, Wenliang, Li, Guoqiang
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Sprache:eng
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