Quantification of Sodium‐Ion Migration in Silicon Nitride by Flatband‐Potential Monitoring at Device‐Operating Temperatures

A trap‐corrected bias–temperature–stress (TraC‐BTS) method to quantify the kinetics of ion migration in dielectrics based on capacitance–voltage measurements is presented. The method is based on the extraction of flatband potential (Vfb) shifts in metal–insulator–semiconductor test structures an ena...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2020-08, Vol.217 (16), p.n/a
Hauptverfasser:	von Gastrow, Guillaume, Martinez-Loran, Erick, Scharf, Jonathan, Clenney, Jacob, Meier, Rico, Bandaru, Prabhakar, Bertoni, Mariana I., Fenning, David P.
Format:	Artikel
Sprache:	eng
Schlagworte:	capacitance-voltage Confidence intervals Dielectric strength Diffusivity Electric fields Electrical measurement Ion migration Kinetics Materials Science MIS (semiconductors) Operating temperature Photovoltaic cells photovoltaics Physics potential-induced degradation Reliability analysis Silicon nitride Sodium Solar cells Trapping
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