Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry
The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refract...
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description | The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refraction for the polarization mode with an electric field perpendicular to the c-axis (ordinary, no) is much higher than that with an electric field parallel to the c-axis (extraordinary, ne). By inclusion of turbostratic- (t-) phase layers within h-BN having an average inclination angle (θ) with respect to the ideal c-plane, a simple method for quantifying θ has been deduced. Our results revealed that the presence of t-phase layers decreases the optical anisotropy of h-BN and that a signature of improved crystalline quality is an increase in the ordinary index of refraction (no) as a result of the average incline angle θ approaching 0° and predicted that no = 2.7 and ne = 1.5 at 280 nm for single crystalline h-BN epilayers. More importantly, our results demonstrated that spectroscopic ellipsometry is an effective technique for characterizing the crystalline quality of h-BN epilayers with the advantages of being noninvasive and highly sensitive. |
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X.</creator><creatorcontrib>McKay, M. A. ; Li, J. ; Lin, J. Y. ; Jiang, H. X. ; Texas Tech Univ., Lubbock, TX (United States)</creatorcontrib><description>The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refraction for the polarization mode with an electric field perpendicular to the c-axis (ordinary, no) is much higher than that with an electric field parallel to the c-axis (extraordinary, ne). By inclusion of turbostratic- (t-) phase layers within h-BN having an average inclination angle (θ) with respect to the ideal c-plane, a simple method for quantifying θ has been deduced. Our results revealed that the presence of t-phase layers decreases the optical anisotropy of h-BN and that a signature of improved crystalline quality is an increase in the ordinary index of refraction (no) as a result of the average incline angle θ approaching 0° and predicted that no = 2.7 and ne = 1.5 at 280 nm for single crystalline h-BN epilayers. More importantly, our results demonstrated that spectroscopic ellipsometry is an effective technique for characterizing the crystalline quality of h-BN epilayers with the advantages of being noninvasive and highly sensitive.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><language>eng</language><publisher>United States: American Institute of Physics (AIP)</publisher><subject>Chemical vapor deposition ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Crystallography ; Dielectric properties ; Effective mass ; Geometrical optics ; Optical constants ; Optical metrology ; Optical properties ; Physics ; Semiconductors ; X-ray diffraction</subject><ispartof>Journal of applied physics, 2020-02, Vol.127 (5)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000000317052635 ; 0000000198924292 ; 0000000328807933 ; 000000016292491X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1799126$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>McKay, M. A.</creatorcontrib><creatorcontrib>Li, J.</creatorcontrib><creatorcontrib>Lin, J. Y.</creatorcontrib><creatorcontrib>Jiang, H. X.</creatorcontrib><creatorcontrib>Texas Tech Univ., Lubbock, TX (United States)</creatorcontrib><title>Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry</title><title>Journal of applied physics</title><description>The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refraction for the polarization mode with an electric field perpendicular to the c-axis (ordinary, no) is much higher than that with an electric field parallel to the c-axis (extraordinary, ne). By inclusion of turbostratic- (t-) phase layers within h-BN having an average inclination angle (θ) with respect to the ideal c-plane, a simple method for quantifying θ has been deduced. Our results revealed that the presence of t-phase layers decreases the optical anisotropy of h-BN and that a signature of improved crystalline quality is an increase in the ordinary index of refraction (no) as a result of the average incline angle θ approaching 0° and predicted that no = 2.7 and ne = 1.5 at 280 nm for single crystalline h-BN epilayers. More importantly, our results demonstrated that spectroscopic ellipsometry is an effective technique for characterizing the crystalline quality of h-BN epilayers with the advantages of being noninvasive and highly sensitive.</description><subject>Chemical vapor deposition</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Crystallography</subject><subject>Dielectric properties</subject><subject>Effective mass</subject><subject>Geometrical optics</subject><subject>Optical constants</subject><subject>Optical metrology</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>X-ray diffraction</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqNzU1KBDEQBeAgCrY_dwjuG5IZxu4sRRQP4H5Ip6udkpgKVTUwvfbiZsQDuHrw-HjvwnTejaEfdjt3aTrnNr4fwxCuzY3Ip3Pej9vQme-ngkLKVDFZLDOcLC2WYeGYFKnYWGYrysekR47Z1iaBFUHO7gCn-EGl9RNxwwWVcQYLFXNcgeXsJ5jttFqpkNqPpN8ryBmr0Bcor3fmaolZ4P4vb83D68v781tPoriXhArpkKiUNrD3Qwh-87j9F_oBKy5Vdw</recordid><startdate>20200207</startdate><enddate>20200207</enddate><creator>McKay, M. A.</creator><creator>Li, J.</creator><creator>Lin, J. Y.</creator><creator>Jiang, H. X.</creator><general>American Institute of Physics (AIP)</general><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000000317052635</orcidid><orcidid>https://orcid.org/0000000198924292</orcidid><orcidid>https://orcid.org/0000000328807933</orcidid><orcidid>https://orcid.org/000000016292491X</orcidid></search><sort><creationdate>20200207</creationdate><title>Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry</title><author>McKay, M. A. ; Li, J. ; Lin, J. Y. ; Jiang, H. X.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_17991263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Chemical vapor deposition</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Crystallography</topic><topic>Dielectric properties</topic><topic>Effective mass</topic><topic>Geometrical optics</topic><topic>Optical constants</topic><topic>Optical metrology</topic><topic>Optical properties</topic><topic>Physics</topic><topic>Semiconductors</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>McKay, M. A.</creatorcontrib><creatorcontrib>Li, J.</creatorcontrib><creatorcontrib>Lin, J. Y.</creatorcontrib><creatorcontrib>Jiang, H. X.</creatorcontrib><creatorcontrib>Texas Tech Univ., Lubbock, TX (United States)</creatorcontrib><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>McKay, M. A.</au><au>Li, J.</au><au>Lin, J. Y.</au><au>Jiang, H. X.</au><aucorp>Texas Tech Univ., Lubbock, TX (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry</atitle><jtitle>Journal of applied physics</jtitle><date>2020-02-07</date><risdate>2020</risdate><volume>127</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refraction for the polarization mode with an electric field perpendicular to the c-axis (ordinary, no) is much higher than that with an electric field parallel to the c-axis (extraordinary, ne). By inclusion of turbostratic- (t-) phase layers within h-BN having an average inclination angle (θ) with respect to the ideal c-plane, a simple method for quantifying θ has been deduced. Our results revealed that the presence of t-phase layers decreases the optical anisotropy of h-BN and that a signature of improved crystalline quality is an increase in the ordinary index of refraction (no) as a result of the average incline angle θ approaching 0° and predicted that no = 2.7 and ne = 1.5 at 280 nm for single crystalline h-BN epilayers. 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subjects | Chemical vapor deposition CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Crystallography Dielectric properties Effective mass Geometrical optics Optical constants Optical metrology Optical properties Physics Semiconductors X-ray diffraction |
title | Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry |
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