High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon
[Display omitted] •CVD SiC oxidation behaviors in an Ar/H2O/air atmosphere up to 1400 °C are studied.•A parabolic and passivating oxidation behavior is found.•SiO2 formation and crystallization, pores, and cracks are observed on SiC surface.•The crack formation depends on oxide layer thickness.•A wa...
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| Veröffentlicht in: | Corrosion science 2020-09, Vol.174 (C), p.108795, Article 108795 |
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| container_title | Corrosion science |
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| creator | Cho, Yi Je Lu, Kathy |
| description | [Display omitted]
•CVD SiC oxidation behaviors in an Ar/H2O/air atmosphere up to 1400 °C are studied.•A parabolic and passivating oxidation behavior is found.•SiO2 formation and crystallization, pores, and cracks are observed on SiC surface.•The crack formation depends on oxide layer thickness.•A water vapor-dominant oxidation model is proposed with high accuracy.
Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H2O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs. |
| doi_str_mv | 10.1016/j.corsci.2020.108795 |
| format | Article |
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•CVD SiC oxidation behaviors in an Ar/H2O/air atmosphere up to 1400 °C are studied.•A parabolic and passivating oxidation behavior is found.•SiO2 formation and crystallization, pores, and cracks are observed on SiC surface.•The crack formation depends on oxide layer thickness.•A water vapor-dominant oxidation model is proposed with high accuracy.
Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H2O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs.</description><identifier>ISSN: 0010-938X</identifier><identifier>EISSN: 1879-0496</identifier><identifier>DOI: 10.1016/j.corsci.2020.108795</identifier><language>eng</language><publisher>Amsterdam: Elsevier Ltd</publisher><subject>Accidental condition ; Air ; Argon ; Cracks ; Fission products ; High temperature ; Loss of coolant accidents ; Oxidation ; SiC ; Water vapor</subject><ispartof>Corrosion science, 2020-09, Vol.174 (C), p.108795, Article 108795</ispartof><rights>2020 Elsevier Ltd</rights><rights>Copyright Elsevier BV Sep 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c407t-48a6be9e31df26d26a6e473970486c9894a477e255f59281ae71f3338cdbf55b3</citedby><cites>FETCH-LOGICAL-c407t-48a6be9e31df26d26a6e473970486c9894a477e255f59281ae71f3338cdbf55b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.corsci.2020.108795$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,777,781,882,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1775701$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Cho, Yi Je</creatorcontrib><creatorcontrib>Lu, Kathy</creatorcontrib><title>High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon</title><title>Corrosion science</title><description>[Display omitted]
•CVD SiC oxidation behaviors in an Ar/H2O/air atmosphere up to 1400 °C are studied.•A parabolic and passivating oxidation behavior is found.•SiO2 formation and crystallization, pores, and cracks are observed on SiC surface.•The crack formation depends on oxide layer thickness.•A water vapor-dominant oxidation model is proposed with high accuracy.
Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H2O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs.</description><subject>Accidental condition</subject><subject>Air</subject><subject>Argon</subject><subject>Cracks</subject><subject>Fission products</subject><subject>High temperature</subject><subject>Loss of coolant accidents</subject><subject>Oxidation</subject><subject>SiC</subject><subject>Water vapor</subject><issn>0010-938X</issn><issn>1879-0496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kEFr2zAYhsXoYGm3f7CDWM9OJVuWrMughHYpBHZYC70JWf7cKE0s95OSdP9-8rzzTh-I53159RDylbMlZ1ze7JYuYHR-WbJyemqUrj-QBc-3YELLC7JgjLNCV83zJ3IZ446xTHK2IK9r_7KlCQ4joE1HBBrefWeTDwNtYWtPPjfT0NP2uH-lv_yKnn3a0n0409Fi8nZPR4QYc_IvZj1SO3T0bBMgPdkxIPUDtfgShs_kY2_3Eb78u1fk6f7ucbUuNj9_PKxuN4UTTKVCNFa2oKHiXV_KrpRWglCVVkw00ulGCyuUgrKu-1qXDbegeF9VVeO6tq_rtroi3-beEJM32UsCt3VhGMAlw5WqFeMZup6hEcPbEWIyu3DEIe8ypRBaN5JJlikxUw5DjAi9GdEfLP42nJnJvdmZ2b2Z3JvZfY59n2OQv3nygNMKGBx0HqcRXfD_L_gDLaCOxg</recordid><startdate>202009</startdate><enddate>202009</enddate><creator>Cho, Yi Je</creator><creator>Lu, Kathy</creator><general>Elsevier Ltd</general><general>Elsevier BV</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SE</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>202009</creationdate><title>High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon</title><author>Cho, Yi Je ; Lu, Kathy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-48a6be9e31df26d26a6e473970486c9894a477e255f59281ae71f3338cdbf55b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Accidental condition</topic><topic>Air</topic><topic>Argon</topic><topic>Cracks</topic><topic>Fission products</topic><topic>High temperature</topic><topic>Loss of coolant accidents</topic><topic>Oxidation</topic><topic>SiC</topic><topic>Water vapor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Yi Je</creatorcontrib><creatorcontrib>Lu, Kathy</creatorcontrib><collection>CrossRef</collection><collection>Corrosion Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>Corrosion science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Yi Je</au><au>Lu, Kathy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon</atitle><jtitle>Corrosion science</jtitle><date>2020-09</date><risdate>2020</risdate><volume>174</volume><issue>C</issue><spage>108795</spage><pages>108795-</pages><artnum>108795</artnum><issn>0010-938X</issn><eissn>1879-0496</eissn><abstract>[Display omitted]
•CVD SiC oxidation behaviors in an Ar/H2O/air atmosphere up to 1400 °C are studied.•A parabolic and passivating oxidation behavior is found.•SiO2 formation and crystallization, pores, and cracks are observed on SiC surface.•The crack formation depends on oxide layer thickness.•A water vapor-dominant oxidation model is proposed with high accuracy.
Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H2O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs.</abstract><cop>Amsterdam</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.corsci.2020.108795</doi><oa>free_for_read</oa></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Accidental condition Air Argon Cracks Fission products High temperature Loss of coolant accidents Oxidation SiC Water vapor |
| title | High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon |
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