Evidence of weak antilocalization in epitaxial TiN thin films
•TiN films exhibit (
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| Veröffentlicht in: | Journal of magnetism and magnetic materials 2020-03, Vol.498 (C), p.166094, Article 166094 |
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| container_issue | C |
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| container_title | Journal of magnetism and magnetic materials |
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| creator | Gupta, Siddharth Sachan, Ritesh Narayan, Jagdish |
| description | •TiN films exhibit ( |
| doi_str_mv | 10.1016/j.jmmm.2019.166094 |
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| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1692247</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0304885319328847</els_id><sourcerecordid>2353616871</sourcerecordid><originalsourceid>FETCH-LOGICAL-c399t-b645ef0e624498cdd864aa6f100a15b06ddffdba4275548e77c3a137851630313</originalsourceid><addsrcrecordid>eNp9kMtOwzAURC0EEqXwA6wiWCfYsWM7EixQVR5SBZuytlw_VIckLrZbHl9PorBmdaXRzGjuAeASwQJBRG-aoum6righqgtEKazJEZghznBOGKXHYAYxJDnnFT4FZzE2EEJEOJ2Bu-XBadMrk3mbfRr5nsk-udYr2bofmZzvM9dnZueS_HKyzdbuJUvbQbKu7eI5OLGyjebi787B28NyvXjKV6-Pz4v7Va5wXad8Q0llLDS0JKTmSmtOiZTUIgglqjaQam2t3khSsqoi3DCmsESY8QpRDDHCc3A19fqYnIjKJaO2yve9UUkgWpclYYPpejLtgv_Ym5hE4_ehH3aJEleYIsrZWFVOLhV8jMFYsQuuk-FbIChGlqIRI0sxshQTyyF0O4XM8OTBmTBuGKlpF8YJ2rv_4r-AY3sg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2353616871</pqid></control><display><type>article</type><title>Evidence of weak antilocalization in epitaxial TiN thin films</title><source>Elsevier ScienceDirect Journals</source><creator>Gupta, Siddharth ; Sachan, Ritesh ; Narayan, Jagdish</creator><creatorcontrib>Gupta, Siddharth ; Sachan, Ritesh ; Narayan, Jagdish</creatorcontrib><description>•TiN films exhibit (<0.5 at.%) VN generating weak magnetic coupling limit.•The plugging of VN in TiN films results in the evolution of Berry’s phase triggering WAL characteristics below 28 ± 0.6 K.•The WAL results in negative magnetoconductance with sharp cusps, following 2D localization theory with T−1/2 dependence of localization length.•The long-ranged magnetic ordering between Ti+2 polarons is actuated by itinerant electron gas, invoking RKKY interactions.•Ti+2 polarons are magnetically active defects which generate spin-orbit coupling in epitaxial TiN films.
Defect engineering provides a tremendous opportunity to impart novel functionalities to nanomaterials. This report is focused on TiN metallic system, where the unpaired spin structure and electron-transport are controlled by injecting nitrogen vacancies (VN). The TiN films are epitaxial, with the TiN/Al2O3 epitaxial relationship given by: (1 1 1) TiN//(0 0 0 1) Al2O3 as out-of-plane, and 〈11-0〉 TiN//〈1 0 1- 0〉 Al2O3 and 〈1 1 2-〉 TiN//〈1 1 2-0〉 Al2O3 as in-plane, after 30° rotation. Epitaxy in such a large misfit system (~9.24%) is rationalized to arise via domain matching epitaxy (DME) paradigm. Following the report of room-temperature ferromagnetism [1] in TiN1−x films formed by injecting nitrogen vacancies, we provide direct experimental evidence of weak antilocalization (WAL) effects by plugging VN using nitrogen annealing of TiN films. This evidence with simultaneous loss of magnetization in nitrogen annealed TiN films is the tell-tale sign of VN acting as magnetically active defects in TiN, as their removal facilitates Berry’s phase formation and generation of time-reversal symmetry. Through detailed EELS and Raman analysis, we have explicitly shown the absence of Ti+2 polarons in TiN films on N2 annealing. The resistivity minima in TiN films are attributed to the WAL effect with persistent log T behavior under 0–7 Tesla magnetic fields. The temperature-dependent coherence length analysis also highlights the emergence of WAL under the two-dimensional localization theory. The WAL effect in TiN is similar to topological insulators, quenching on the introduction of magnetically active defects, while stable against non-magnetic defects. Our findings demonstrate the prime importance of nitrogen vacancies in tuning the magentotransport characteristics in epitaxial nitride films for optoelectronic device applications.</description><identifier>ISSN: 0304-8853</identifier><identifier>EISSN: 1873-4766</identifier><identifier>DOI: 10.1016/j.jmmm.2019.166094</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Aluminum oxide ; Annealing ; Coherence length ; Defects ; Domain matching epitaxy ; Eels ; Electron energy-loss spectroscopy ; Electron spin ; Electron transport ; Epitaxy ; Ferromagnetism ; Nanomaterials ; Nitrogen ; Optoelectronic devices ; Raman spectroscopy ; Room temperature ; Spin structure ; Temperature dependence ; Thin films ; Titanium nitride ; Topological insulators ; Vacancies ; Weak antilocalization</subject><ispartof>Journal of magnetism and magnetic materials, 2020-03, Vol.498 (C), p.166094, Article 166094</ispartof><rights>2019</rights><rights>Copyright Elsevier BV Mar 15, 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-b645ef0e624498cdd864aa6f100a15b06ddffdba4275548e77c3a137851630313</citedby><cites>FETCH-LOGICAL-c399t-b645ef0e624498cdd864aa6f100a15b06ddffdba4275548e77c3a137851630313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0304885319328847$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1692247$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Gupta, Siddharth</creatorcontrib><creatorcontrib>Sachan, Ritesh</creatorcontrib><creatorcontrib>Narayan, Jagdish</creatorcontrib><title>Evidence of weak antilocalization in epitaxial TiN thin films</title><title>Journal of magnetism and magnetic materials</title><description>•TiN films exhibit (<0.5 at.%) VN generating weak magnetic coupling limit.•The plugging of VN in TiN films results in the evolution of Berry’s phase triggering WAL characteristics below 28 ± 0.6 K.•The WAL results in negative magnetoconductance with sharp cusps, following 2D localization theory with T−1/2 dependence of localization length.•The long-ranged magnetic ordering between Ti+2 polarons is actuated by itinerant electron gas, invoking RKKY interactions.•Ti+2 polarons are magnetically active defects which generate spin-orbit coupling in epitaxial TiN films.
Defect engineering provides a tremendous opportunity to impart novel functionalities to nanomaterials. This report is focused on TiN metallic system, where the unpaired spin structure and electron-transport are controlled by injecting nitrogen vacancies (VN). The TiN films are epitaxial, with the TiN/Al2O3 epitaxial relationship given by: (1 1 1) TiN//(0 0 0 1) Al2O3 as out-of-plane, and 〈11-0〉 TiN//〈1 0 1- 0〉 Al2O3 and 〈1 1 2-〉 TiN//〈1 1 2-0〉 Al2O3 as in-plane, after 30° rotation. Epitaxy in such a large misfit system (~9.24%) is rationalized to arise via domain matching epitaxy (DME) paradigm. Following the report of room-temperature ferromagnetism [1] in TiN1−x films formed by injecting nitrogen vacancies, we provide direct experimental evidence of weak antilocalization (WAL) effects by plugging VN using nitrogen annealing of TiN films. This evidence with simultaneous loss of magnetization in nitrogen annealed TiN films is the tell-tale sign of VN acting as magnetically active defects in TiN, as their removal facilitates Berry’s phase formation and generation of time-reversal symmetry. Through detailed EELS and Raman analysis, we have explicitly shown the absence of Ti+2 polarons in TiN films on N2 annealing. The resistivity minima in TiN films are attributed to the WAL effect with persistent log T behavior under 0–7 Tesla magnetic fields. The temperature-dependent coherence length analysis also highlights the emergence of WAL under the two-dimensional localization theory. The WAL effect in TiN is similar to topological insulators, quenching on the introduction of magnetically active defects, while stable against non-magnetic defects. Our findings demonstrate the prime importance of nitrogen vacancies in tuning the magentotransport characteristics in epitaxial nitride films for optoelectronic device applications.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Coherence length</subject><subject>Defects</subject><subject>Domain matching epitaxy</subject><subject>Eels</subject><subject>Electron energy-loss spectroscopy</subject><subject>Electron spin</subject><subject>Electron transport</subject><subject>Epitaxy</subject><subject>Ferromagnetism</subject><subject>Nanomaterials</subject><subject>Nitrogen</subject><subject>Optoelectronic devices</subject><subject>Raman spectroscopy</subject><subject>Room temperature</subject><subject>Spin structure</subject><subject>Temperature dependence</subject><subject>Thin films</subject><subject>Titanium nitride</subject><subject>Topological insulators</subject><subject>Vacancies</subject><subject>Weak antilocalization</subject><issn>0304-8853</issn><issn>1873-4766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAURC0EEqXwA6wiWCfYsWM7EixQVR5SBZuytlw_VIckLrZbHl9PorBmdaXRzGjuAeASwQJBRG-aoum6righqgtEKazJEZghznBOGKXHYAYxJDnnFT4FZzE2EEJEOJ2Bu-XBadMrk3mbfRr5nsk-udYr2bofmZzvM9dnZueS_HKyzdbuJUvbQbKu7eI5OLGyjebi787B28NyvXjKV6-Pz4v7Va5wXad8Q0llLDS0JKTmSmtOiZTUIgglqjaQam2t3khSsqoi3DCmsESY8QpRDDHCc3A19fqYnIjKJaO2yve9UUkgWpclYYPpejLtgv_Ym5hE4_ehH3aJEleYIsrZWFVOLhV8jMFYsQuuk-FbIChGlqIRI0sxshQTyyF0O4XM8OTBmTBuGKlpF8YJ2rv_4r-AY3sg</recordid><startdate>20200315</startdate><enddate>20200315</enddate><creator>Gupta, Siddharth</creator><creator>Sachan, Ritesh</creator><creator>Narayan, Jagdish</creator><general>Elsevier B.V</general><general>Elsevier BV</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20200315</creationdate><title>Evidence of weak antilocalization in epitaxial TiN thin films</title><author>Gupta, Siddharth ; Sachan, Ritesh ; Narayan, Jagdish</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-b645ef0e624498cdd864aa6f100a15b06ddffdba4275548e77c3a137851630313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Coherence length</topic><topic>Defects</topic><topic>Domain matching epitaxy</topic><topic>Eels</topic><topic>Electron energy-loss spectroscopy</topic><topic>Electron spin</topic><topic>Electron transport</topic><topic>Epitaxy</topic><topic>Ferromagnetism</topic><topic>Nanomaterials</topic><topic>Nitrogen</topic><topic>Optoelectronic devices</topic><topic>Raman spectroscopy</topic><topic>Room temperature</topic><topic>Spin structure</topic><topic>Temperature dependence</topic><topic>Thin films</topic><topic>Titanium nitride</topic><topic>Topological insulators</topic><topic>Vacancies</topic><topic>Weak antilocalization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gupta, Siddharth</creatorcontrib><creatorcontrib>Sachan, Ritesh</creatorcontrib><creatorcontrib>Narayan, Jagdish</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of magnetism and magnetic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gupta, Siddharth</au><au>Sachan, Ritesh</au><au>Narayan, Jagdish</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence of weak antilocalization in epitaxial TiN thin films</atitle><jtitle>Journal of magnetism and magnetic materials</jtitle><date>2020-03-15</date><risdate>2020</risdate><volume>498</volume><issue>C</issue><spage>166094</spage><pages>166094-</pages><artnum>166094</artnum><issn>0304-8853</issn><eissn>1873-4766</eissn><abstract>•TiN films exhibit (<0.5 at.%) VN generating weak magnetic coupling limit.•The plugging of VN in TiN films results in the evolution of Berry’s phase triggering WAL characteristics below 28 ± 0.6 K.•The WAL results in negative magnetoconductance with sharp cusps, following 2D localization theory with T−1/2 dependence of localization length.•The long-ranged magnetic ordering between Ti+2 polarons is actuated by itinerant electron gas, invoking RKKY interactions.•Ti+2 polarons are magnetically active defects which generate spin-orbit coupling in epitaxial TiN films.
Defect engineering provides a tremendous opportunity to impart novel functionalities to nanomaterials. This report is focused on TiN metallic system, where the unpaired spin structure and electron-transport are controlled by injecting nitrogen vacancies (VN). The TiN films are epitaxial, with the TiN/Al2O3 epitaxial relationship given by: (1 1 1) TiN//(0 0 0 1) Al2O3 as out-of-plane, and 〈11-0〉 TiN//〈1 0 1- 0〉 Al2O3 and 〈1 1 2-〉 TiN//〈1 1 2-0〉 Al2O3 as in-plane, after 30° rotation. Epitaxy in such a large misfit system (~9.24%) is rationalized to arise via domain matching epitaxy (DME) paradigm. Following the report of room-temperature ferromagnetism [1] in TiN1−x films formed by injecting nitrogen vacancies, we provide direct experimental evidence of weak antilocalization (WAL) effects by plugging VN using nitrogen annealing of TiN films. This evidence with simultaneous loss of magnetization in nitrogen annealed TiN films is the tell-tale sign of VN acting as magnetically active defects in TiN, as their removal facilitates Berry’s phase formation and generation of time-reversal symmetry. Through detailed EELS and Raman analysis, we have explicitly shown the absence of Ti+2 polarons in TiN films on N2 annealing. The resistivity minima in TiN films are attributed to the WAL effect with persistent log T behavior under 0–7 Tesla magnetic fields. The temperature-dependent coherence length analysis also highlights the emergence of WAL under the two-dimensional localization theory. The WAL effect in TiN is similar to topological insulators, quenching on the introduction of magnetically active defects, while stable against non-magnetic defects. Our findings demonstrate the prime importance of nitrogen vacancies in tuning the magentotransport characteristics in epitaxial nitride films for optoelectronic device applications.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jmmm.2019.166094</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum oxide Annealing Coherence length Defects Domain matching epitaxy Eels Electron energy-loss spectroscopy Electron spin Electron transport Epitaxy Ferromagnetism Nanomaterials Nitrogen Optoelectronic devices Raman spectroscopy Room temperature Spin structure Temperature dependence Thin films Titanium nitride Topological insulators Vacancies Weak antilocalization |
| title | Evidence of weak antilocalization in epitaxial TiN thin films |
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