Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour

[Display omitted] The resistive switching effect is a great physical phenomenon that the resistance of a material can be reversibly changed by applying an electric pulse, which is useful to constructing the nonvolatile resistance random access memory (RRAM) in the next generation of memory system. I...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of colloid and interface science 2019-10, Vol.553 (C), p.682-687
Hauptverfasser:	Sun, Bai, Guo, Tao, Zhou, Guangdong, Ranjan, Shubham, Hou, Wentao, Hou, Yunming, Zhao, Yong
Format:	Artikel
Sprache:	eng
Schlagworte:	Memory device Photon-generated carrier Resistive switching Schottky barrier Tunneling
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!