Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation
In this article, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origi...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2020-09, Vol.67 (9), p.2021-2027 |
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| container_issue | 9 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Kumari, Preeti Huang, Sijay Wasiolek, Maryla Hattar, Khalid Ray, Biswajit |
| description | In this article, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. We discuss the possible application of our findings for the radiation-tolerant smart memory controller design. |
| doi_str_mv | 10.1109/TNS.2020.3014261 |
| format | Article |
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(SNL-NM), Albuquerque, NM (United States)</creatorcontrib><title>Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>In this article, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. 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| subjects | 3-D NAND flash bit error Cobalt Computer architecture Control systems design Fabrication Flash memories Flash memory (computers) Gamma rays Ionization Ionizing radiation Laboratories Logic gates memory controller Nonvolatile memory NUCLEAR PHYSICS AND RADIATION PHYSICS Radiation effects Variation γ Radiation |
| title | Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation |
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