Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

We analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrain...

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Veröffentlicht in:	Journal of applied physics 2020-07, Vol.128 (2)
Hauptverfasser:	Mukherjee, Kunal, Selvidge, Jennifer, Jung, Daehwan, Norman, Justin, Taylor, Aidan A., Salmon, Mike, Liu, Alan Y., Bowers, John E., Herrick, Robert W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier injection Cathodoluminescence Degradation Dislocation mobility Indium arsenides Lasers Misfit dislocations Quantum dot lasers Quantum dots Silicon Spontaneous emission
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