Close-spaced vapor transport reactor for III-V growth using HCl as the transport agent

•HCl transports GaAs in a new close-spaced vapor transport reactor.•Both n-type and p-type doping using Si and Zn, respectively, is possible.•Hall mobilities of 3400 cm2 V−1 s−1 for n-GaAs and 110 cm2 V−1 s−1 for p-GaAs. Low-cost methods of III-V deposition are an important component of making high-...

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Veröffentlicht in:	Journal of crystal growth 2019-01, Vol.506 (C), p.147-155
Hauptverfasser:	Funch, Christopher J., Greenaway, Ann L., Boucher, Jason W., Weiss, Robert, Welsh, Alex, Aloni, Shaul, Boettcher, Shannon W.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Reactor design, doping, characterization A3. Chloride vapor phase epitaxy, close-spaced vapor transport B2. Gallium arsenide Design defects Doping Epitaxial growth Materials handling Metalorganic chemical vapor deposition Morphology P-n junctions Photovoltaic cells Solar cells Substrates Transport Vapor phase epitaxy
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