The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC

•The dependence of Si droplets on the growth temperature on 4H-SiC substrates and its mechanism have been investigated.•The results indicated that the Si droplets were highly crystalline.•The Si droplet generation could be suppressed by increasing the growth temperature, though the growth rate decli...

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Veröffentlicht in:	Journal of crystal growth 2018-12, Vol.504 (C), p.37-40
Hauptverfasser:	Niu, Yingxi, Tang, Xiaoyan, Sang, Ling, Li, Yun, Kong, Lingyi, Tian, Liang, Tian, Honglin, Wu, Pengfei, Jia, Renxu, Yang, Fei, Wu, Junmin, Pan, Yan, Zhang, Yuming
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Defects A1. Surfaces A3. Chemical vapor deposition processes B2. Semiconducting materials B2. Semiconducting silicon compounds Chemical vapor deposition Dependence Droplets Influence Organic chemistry Silicon Substrates Temperature
Online-Zugang:	Volltext
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