Determination of background doping polarity of unintentionally doped semiconductor layers
We present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devic...
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| Veröffentlicht in: | Applied physics letters 2020-02, Vol.116 (7) |
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| container_title | Applied physics letters |
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| creator | Fink, D. R. Lee, S. Kodati, S. H. Rogers, V. Ronningen, T. J. Winslow, M. Grein, C. H. Jones, A. H. Campbell, J. C. Klem, J. F. Krishna, S. |
| description | We present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type. |
| doi_str_mv | 10.1063/1.5142377 |
| format | Article |
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R. ; Lee, S. ; Kodati, S. H. ; Rogers, V. ; Ronningen, T. J. ; Winslow, M. ; Grein, C. H. ; Jones, A. H. ; Campbell, J. C. ; Klem, J. F. ; Krishna, S.</creator><creatorcontrib>Fink, D. R. ; Lee, S. ; Kodati, S. H. ; Rogers, V. ; Ronningen, T. J. ; Winslow, M. ; Grein, C. H. ; Jones, A. H. ; Campbell, J. C. ; Klem, J. F. ; Krishna, S. ; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><description>We present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5142377</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Capacitance ; Doping ; Electrical measurement ; ENGINEERING ; Measuring instruments ; Monolayers ; P-n junctions ; Polarity ; Substrates ; Superlattices</subject><ispartof>Applied physics letters, 2020-02, Vol.116 (7)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.</description><subject>Applied physics</subject><subject>Capacitance</subject><subject>Doping</subject><subject>Electrical measurement</subject><subject>ENGINEERING</subject><subject>Measuring instruments</subject><subject>Monolayers</subject><subject>P-n junctions</subject><subject>Polarity</subject><subject>Substrates</subject><subject>Superlattices</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90E1LwzAYB_AgCs7pwW9Q9KTQmSdZ-nKU-QoDL3rwFNI0mZldUpNU6Le3dUMPgqfwkB_Pyx-hU8AzwBm9ghmDOaF5vocmgPM8pQDFPppgjGmalQwO0VEI66FkhNIJer1RUfmNsSIaZxOnk0rI95V3na2T2rXGrpLWNcKb2I-_nTU2Kjti0TT9SFSdBLUx0tm6k9H5pBG98uEYHWjRBHWye6fo5e72efGQLp_uHxfXy1TSooypxqWuqoKUNTDCpAZQGOasyDFhTBAKkiotS1ZTUmREQi6AFQoyUmnGQOV0is62fV2IhgdpopJvwzJWycghg5zickDnW9R699GpEPnadX44IXBCWYEBU0oGdbFV0rsQvNK89WYjfM8B8zFeDnwX72Avt3ac-B3eD_50_hfyttb_4b-dvwDEMoiA</recordid><startdate>20200218</startdate><enddate>20200218</enddate><creator>Fink, D. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Capacitance Doping Electrical measurement ENGINEERING Measuring instruments Monolayers P-n junctions Polarity Substrates Superlattices |
| title | Determination of background doping polarity of unintentionally doped semiconductor layers |
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