Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps
Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal-semiconductor-metal structures and tested with ultrafast, UV laser pulses. The measurements were done with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were system...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2020-06, Vol.56 (3), p.1-1 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Zhao, Y. Donaldson, W. R. |
| description | Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal-semiconductor-metal structures and tested with ultrafast, UV laser pulses. The measurements were done with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy. |
| doi_str_mv | 10.1109/JQE.2020.2981043 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_osti_scitechconnect_1616151</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9037242</ieee_id><sourcerecordid>2383331979</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-797f4c4371a8c8496b07aee67bf45fbfe54da259b2bfa792673652ed6556e9d23</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wUvQ89Z8bjbHWmpV6nfrxUPI7s7SLdtm3aQU_72pFZnDMMMzw8uD0DklA0qJvn54HQ8YYWTAdEaJ4AeoR6XMEqooP0Q9QmiWaKrVMTrxfhlHITLSQ5_zJnS2sj7g-QceNhP7hB8h2CZ5h1VduHW5KYLrkt8dflm44EoIsNvhbR0W2OI38K1be8CzegX4Bhq3xUzi1p-io8o2Hs7-eh_Nb8ez0V0yfZ7cj4bTpOApCYnSqhKF4IrarMiETnOiLECq8krIKq9AitIyqXOWV1ZpliqeSgZlKmUKumS8jy73f50PtfFFHfMtYvR1jGloGkvSCF3tobZzXxvwwSzdplvHXIbxjHMe3ehIkT1VdM77DirTdvXKdt-GErPzbKJns_Ns_jzHk4v9SQ0A_7gmXDHB-A8-I3dY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2383331979</pqid></control><display><type>article</type><title>Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps</title><source>IEEE Electronic Library (IEL)</source><creator>Zhao, Y. ; Donaldson, W. R.</creator><creatorcontrib>Zhao, Y. ; Donaldson, W. R. ; Univ. of Rochester, NY (United States). Lab. for Laser Energetics</creatorcontrib><description>Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal-semiconductor-metal structures and tested with ultrafast, UV laser pulses. The measurements were done with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2020.2981043</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaN ; Aluminum gallium nitrides ; Dark current ; ENGINEERING ; Oscilloscopes ; Photometers ; Response time ; Ultrafast ; Ultraviolet lasers ; UV photodetector</subject><ispartof>IEEE journal of quantum electronics, 2020-06, Vol.56 (3), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-797f4c4371a8c8496b07aee67bf45fbfe54da259b2bfa792673652ed6556e9d23</citedby><cites>FETCH-LOGICAL-c360t-797f4c4371a8c8496b07aee67bf45fbfe54da259b2bfa792673652ed6556e9d23</cites><orcidid>0000-0002-8418-5721 ; 0000000284185721</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9037242$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,777,781,793,882,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9037242$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/servlets/purl/1616151$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhao, Y.</creatorcontrib><creatorcontrib>Donaldson, W. R.</creatorcontrib><creatorcontrib>Univ. of Rochester, NY (United States). Lab. for Laser Energetics</creatorcontrib><title>Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal-semiconductor-metal structures and tested with ultrafast, UV laser pulses. The measurements were done with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy.</description><subject>AlGaN</subject><subject>Aluminum gallium nitrides</subject><subject>Dark current</subject><subject>ENGINEERING</subject><subject>Oscilloscopes</subject><subject>Photometers</subject><subject>Response time</subject><subject>Ultrafast</subject><subject>Ultraviolet lasers</subject><subject>UV photodetector</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wUvQ89Z8bjbHWmpV6nfrxUPI7s7SLdtm3aQU_72pFZnDMMMzw8uD0DklA0qJvn54HQ8YYWTAdEaJ4AeoR6XMEqooP0Q9QmiWaKrVMTrxfhlHITLSQ5_zJnS2sj7g-QceNhP7hB8h2CZ5h1VduHW5KYLrkt8dflm44EoIsNvhbR0W2OI38K1be8CzegX4Bhq3xUzi1p-io8o2Hs7-eh_Nb8ez0V0yfZ7cj4bTpOApCYnSqhKF4IrarMiETnOiLECq8krIKq9AitIyqXOWV1ZpliqeSgZlKmUKumS8jy73f50PtfFFHfMtYvR1jGloGkvSCF3tobZzXxvwwSzdplvHXIbxjHMe3ehIkT1VdM77DirTdvXKdt-GErPzbKJns_Ns_jzHk4v9SQ0A_7gmXDHB-A8-I3dY</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Zhao, Y.</creator><creator>Donaldson, W. R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-8418-5721</orcidid><orcidid>https://orcid.org/0000000284185721</orcidid></search><sort><creationdate>20200601</creationdate><title>Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps</title><author>Zhao, Y. ; Donaldson, W. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-797f4c4371a8c8496b07aee67bf45fbfe54da259b2bfa792673652ed6556e9d23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>AlGaN</topic><topic>Aluminum gallium nitrides</topic><topic>Dark current</topic><topic>ENGINEERING</topic><topic>Oscilloscopes</topic><topic>Photometers</topic><topic>Response time</topic><topic>Ultrafast</topic><topic>Ultraviolet lasers</topic><topic>UV photodetector</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Y.</creatorcontrib><creatorcontrib>Donaldson, W. R.</creatorcontrib><creatorcontrib>Univ. of Rochester, NY (United States). Lab. for Laser Energetics</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhao, Y.</au><au>Donaldson, W. R.</au><aucorp>Univ. of Rochester, NY (United States). Lab. for Laser Energetics</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2020-06-01</date><risdate>2020</risdate><volume>56</volume><issue>3</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale metal-semiconductor-metal structures and tested with ultrafast, UV laser pulses. The measurements were done with single-shot oscilloscopes. Pulse-broadening effects caused by the measurement system were systematically evaluated and reduced to resolve the intrinsic response time of the detector. The best-performing devices showed a response time of below 25 ps and dark currents below 20 pA. The devices showed linear response with the bias voltage and the laser energy.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JQE.2020.2981043</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-8418-5721</orcidid><orcidid>https://orcid.org/0000000284185721</orcidid><oa>free_for_read</oa></addata></record> |
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| issn | 0018-9197 1558-1713 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | AlGaN Aluminum gallium nitrides Dark current ENGINEERING Oscilloscopes Photometers Response time Ultrafast Ultraviolet lasers UV photodetector |
| title | Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T01%3A53%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultrafast%20UV%20AlGaN%20Metal-Semiconductor-Metal%20Photodetector%20with%20a%20Response%20Time%20Below%2025%20ps&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Zhao,%20Y.&rft.aucorp=Univ.%20of%20Rochester,%20NY%20(United%20States).%20Lab.%20for%20Laser%20Energetics&rft.date=2020-06-01&rft.volume=56&rft.issue=3&rft.spage=1&rft.epage=1&rft.pages=1-1&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/JQE.2020.2981043&rft_dat=%3Cproquest_RIE%3E2383331979%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2383331979&rft_id=info:pmid/&rft_ieee_id=9037242&rfr_iscdi=true |