Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method
Gallium doped ZnO nanorods exhibiting good PL performance were grown via a solution method. The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow–orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow–orange emission almost disapp...
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Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2018-10, Vol.904 (C), p.158-162 |
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container_title | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
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creator | Kurudirek, Sinem V. Kurudirek, Murat Klein, Benjamin D.B. Summers, Christopher J. Hertel, Nolan E. |
description | Gallium doped ZnO nanorods exhibiting good PL performance were grown via a solution method. The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow–orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow–orange emission almost disappeared and the UV emission increased significantly (for ZnO:Ga (1.2%) peak intensity ratio ≅ 56). With Ga doping, the UV emission peak shifted from 3.27 eV to 3.28 eV. Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO. |
doi_str_mv | 10.1016/j.nima.2018.07.038 |
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The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow–orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow–orange emission almost disappeared and the UV emission increased significantly (for ZnO:Ga (1.2%) peak intensity ratio ≅ 56). With Ga doping, the UV emission peak shifted from 3.27 eV to 3.28 eV. Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). 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Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO.</description><subject>Alpha detection</subject><subject>Annealing</subject><subject>Instruments & Instrumentation</subject><subject>Nuclear Science & Technology</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>ZnO nanorod array</subject><issn>0168-9002</issn><issn>1872-9576</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKxDAQhoMouK6-gKfgvTXTbpsWvIjoKizsQb14CWkypVm2SUmyyr69KevZuWQC__8xfITcAsuBQX2_y60ZZV4waHLGc1Y2Z2QBDS-ytuL1OVmkUJO1jBWX5CqEHUvT8mZBhvejjQMGE6i0mk6Di25_GI3FoNAqpJN3E_poMFDX07XMdPpr-mW31ErrvNOBdkcq6d790IhjCst48EhD4kTjLB0xDk5fk4te7gPe_L1L8vny_PH0mm2267enx02mSg4xk5w3fSdRcZCybbqaawayWfVQdi1AD6CKUnaV1iXyWq5q6EC1vKqUnJeiXJK7E9eFaERQJqIalLMWVRRQw6oq2xQqTiHlXQgeezH55M8fBTAxCxU7MQsVs1DBuEhCU-nhVMJ0_rdBP9NnR9r4Ga6d-a_-CzsQgUg</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Kurudirek, Sinem V.</creator><creator>Kurudirek, Murat</creator><creator>Klein, Benjamin D.B.</creator><creator>Summers, Christopher J.</creator><creator>Hertel, Nolan E.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20181001</creationdate><title>Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method</title><author>Kurudirek, Sinem V. ; Kurudirek, Murat ; Klein, Benjamin D.B. ; Summers, Christopher J. ; Hertel, Nolan E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-a778fbaec71aa98b67d01a84f13b911f11c23ab5dd3e76a461b1c9755cab1c923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Alpha detection</topic><topic>Annealing</topic><topic>Instruments & Instrumentation</topic><topic>Nuclear Science & Technology</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>ZnO nanorod array</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kurudirek, Sinem V.</creatorcontrib><creatorcontrib>Kurudirek, Murat</creatorcontrib><creatorcontrib>Klein, Benjamin D.B.</creatorcontrib><creatorcontrib>Summers, Christopher J.</creatorcontrib><creatorcontrib>Hertel, Nolan E.</creatorcontrib><creatorcontrib>North Carolina State Univ., Raleigh, NC (United States)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Nuclear instruments & methods in physics research. 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Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO.</abstract><cop>United States</cop><pub>Elsevier B.V</pub><doi>10.1016/j.nima.2018.07.038</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Alpha detection Annealing Instruments & Instrumentation Nuclear Science & Technology Photoluminescence Physics ZnO nanorod array |
title | Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method |
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