Effects of ion irradiation on chemical and mechanical properties of magnetron sputtered amorphous SiOC

Amorphous silicon oxycarbide (SiOC) films, fabricated by magnetron sputtering, were irradiated at room temperature with 3.5 MeV Fe ions to damage levels of 10, 20, and 50 displacements per atom (dpa). Irradiation-induced changes in the nature of the atomic bonds were studied using Raman spectroscopy...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2019-05, Vol.446 (C), p.10-14
Hauptverfasser:	Zare, A., Su, Q., Gigax, J., Shojaee, S.A., Harriman, T.A., Nastasi, M., Shao, L., Materer, N.F., Lucca, D.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Instruments & Instrumentation Ion irradiation Irradiation tolerant materials Microindentation Nuclear Science & Technology Physics Pile-up Radial cracks Ripple formation
Online-Zugang:	Volltext
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