Enhancement of Thermoelectric Performance for n‑Type PbS through Synergy of Gap State and Fermi Level Pinning

We report that Ga-doped and Ga–In-codoped n-type PbS samples show excellent thermoelectric performance in the intermediate temperature range. First-principles electronic structure calculations reveal that Ga doping can cause Fermi level pinning in PbS by introducing a gap state between the conductio...

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Veröffentlicht in:	Journal of the American Chemical Society 2019-04, Vol.141 (15), p.6403-6412
Hauptverfasser:	Luo, Zhong-Zhen, Hao, Shiqiang, Cai, Songting, Bailey, Trevor P, Tan, Gangjian, Luo, Yubo, Spanopoulos, Ioannis, Uher, Ctirad, Wolverton, Chris, Dravid, Vinayak P, Yan, Qingyu, Kanatzidis, Mercouri G
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry
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