Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transit...
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| Veröffentlicht in: | Journal of the American Chemical Society 2018-10, Vol.140 (39), p.12354-12358 |
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| creator | Leong, Wei Sun Ji, Qingqing Mao, Nannan Han, Yimo Wang, Haozhe Goodman, Aaron J Vignon, Antoine Su, Cong Guo, Yunfan Shen, Pin-Chun Gao, Zhenfei Muller, David A Tisdale, William A Kong, Jing |
| description | Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS2 in such junctions was revealed to nucleate from the vertices of multilayered VS2 crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS2, compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics. |
| doi_str_mv | 10.1021/jacs.8b07806 |
| format | Article |
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| title | Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides |
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