Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure

In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=...

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Veröffentlicht in:Physical review. B 2020-02, Vol.101 (7)
Hauptverfasser: Liu, Xiaoxue, Lu, Tzu-Ming, Harris, Charles Thomas, Lu, Fang-Liang, Liu, Chia-You, Li, Jiun-Yun, Liu, Chee Wee, Du, Rui-Rui
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container_issue 7
container_start_page
container_title Physical review. B
container_volume 101
creator Liu, Xiaoxue
Lu, Tzu-Ming
Harris, Charles Thomas
Lu, Fang-Liang
Liu, Chia-You
Li, Jiun-Yun
Liu, Chee Wee
Du, Rui-Rui
description In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).
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title Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure
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