Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure
In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=...
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Veröffentlicht in: | Physical review. B 2020-02, Vol.101 (7) |
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creator | Liu, Xiaoxue Lu, Tzu-Ming Harris, Charles Thomas Lu, Fang-Liang Liu, Chia-You Li, Jiun-Yun Liu, Chee Wee Du, Rui-Rui |
description | In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field). |
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B</jtitle><date>2020-02-12</date><risdate>2020</risdate><volume>101</volume><issue>7</issue><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).</abstract><cop>United States</cop><pub>American Physical Society (APS)</pub><oa>free_for_read</oa></addata></record> |
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title | Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure |
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