Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high‐speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipola...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Weinheim) 2020-03, Vol.32 (9), p.e1905132-n/a
Hauptverfasser:	Huang, Yen‐Lin, Zheng, Lu, Chen, Peng, Cheng, Xiaoxing, Hsu, Shang‐Lin, Yang, Tiannan, Wu, Xiaoyu, Ponet, Louis, Ramesh, Ramamoorthy, Chen, Long‐Qing, Artyukhin, Sergey, Chu, Ying‐Hao, Lai, Keji
Format:	Artikel
Sprache:	eng
Schlagworte:	ac conductivity Alternating current Bismuth ferrite Current carriers Direct current domain wall nanoelectronics Domain walls Electric fields Ferroelectric domains Ferroelectric materials Ferroelectricity Microwave circuits microwave microscopy Nanoelectronics Nanotechnology devices Rectifiers Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!