The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers

The model for intrinsic defects in Cu(In,Ga)Se2 semiconductor layers is still under debate for the full range between CuInSe2 and CuGaSe2. It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGa...

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Veröffentlicht in:	Journal of physics. Condensed matter 2019-07, Vol.31 (42), p.425702-425702
Hauptverfasser:	Babbe, Finn, Elanzeery, Hossam, Wolter, Max H, Santhosh, Korra, Siebentritt, Susanne
Format:	Artikel
Sprache:	eng
Schlagworte:	admittance CIGS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Cu-rich CuInSe CuInSe2 defects photoluminescence
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