Study of Effects of Cl and Se in CdSeTe Solar Cells Using Scanning Transmission Electron Microscopy

Solar cells based on poly-crystalline CdTe thin films are a leading candidate for low-cost conversion of solar energy due to their near optimum band gap, high absorption coefficient and ease of manufacturing. Due to non-radiative Shockley-Read-Hall (SRH) recombination at grain boundaries (GBs), dislocations, and point defects, current CdTe-based solar cell efficiency appears to be limited to ~22%, which is still below the theoretical limit (~30%). It is well known that CdCl2 annealing is essential for high performing CdTe solar cells due to grain recrystallization and passivation of defect states within the band gap by Cl atoms. Incorporating Se into CdTe to form an alloyed CdSeTe solar cells also shows a high overall efficiency. Simultaneous addition of Cl and Se can further improve the efficiencies of CdTe solar cells, but yet a comprehensive experimental and theoretical study of effects of Cl and Se in CdSeTe solar cell is absent.