Oriented Growth of Gold Nanowires on MoS2
Layered 2D materials serve as a new class of substrates for templated synthesis of various nanomaterials even with highly dissimilar crystal structures; thus overcoming the lattice constraints of conventional epitaxial processes. Here, molybdenum disulfide (MoS2) is used as a prototypical model subs...
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Veröffentlicht in: | Advanced functional materials 2015-10, Vol.25 (39), p.6257-6264 |
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creator | Kiriya, Daisuke Zhou, Yuzhi Nelson, Christopher Hettick, Mark Madhvapathy, Surabhi Rao Chen, Kevin Zhao, Peida Tosun, Mahmut Minor, Andrew M. Chrzan, Daryl C. Javey, Ali |
description | Layered 2D materials serve as a new class of substrates for templated synthesis of various nanomaterials even with highly dissimilar crystal structures; thus overcoming the lattice constraints of conventional epitaxial processes. Here, molybdenum disulfide (MoS2) is used as a prototypical model substrate for oriented growth of in‐plane Au nanowires (NWs) despite the nearly 8% lattice mismatch between MoS2 and Au. Au NWs on the MoS2 surface are oriented along three symmetrically equivalent directions within the substrate arising from the strong Au–S binding that templates the oriented growth. The kinetics of the growth process are explored through experiments and modeling. Strong charge transfer is observed between Au NWs and MoS2, resulting in degenerate p‐doping of MoS2.
Au nanowires (NWs) are laterally grown on a 2D material, molybdenum disulfide (MoS2) via treatment with AuCl3 solution. The Au NWs are oriented on the MoS2 surface with C3 symmetry, reflecting the surface of the MoS2 crystal plane. Analysis of the electrical characteristics indicates a surface charge transfer reaction between AuCl3 and MoS2, showing p‐type doping up to the degenerate limit. |
doi_str_mv | 10.1002/adfm.201502582 |
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Au nanowires (NWs) are laterally grown on a 2D material, molybdenum disulfide (MoS2) via treatment with AuCl3 solution. The Au NWs are oriented on the MoS2 surface with C3 symmetry, reflecting the surface of the MoS2 crystal plane. Analysis of the electrical characteristics indicates a surface charge transfer reaction between AuCl3 and MoS2, showing p‐type doping up to the degenerate limit.</description><identifier>ISSN: 1616-301X</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.201502582</identifier><language>eng</language><publisher>United States: Blackwell Publishing Ltd</publisher><subject>field effect transistors (FET) ; MATERIALS SCIENCE ; nanowires ; transition metal dichalcogenides</subject><ispartof>Advanced functional materials, 2015-10, Vol.25 (39), p.6257-6264</ispartof><rights>2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadfm.201502582$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadfm.201502582$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,314,780,784,885,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1571925$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kiriya, Daisuke</creatorcontrib><creatorcontrib>Zhou, Yuzhi</creatorcontrib><creatorcontrib>Nelson, Christopher</creatorcontrib><creatorcontrib>Hettick, Mark</creatorcontrib><creatorcontrib>Madhvapathy, Surabhi Rao</creatorcontrib><creatorcontrib>Chen, Kevin</creatorcontrib><creatorcontrib>Zhao, Peida</creatorcontrib><creatorcontrib>Tosun, Mahmut</creatorcontrib><creatorcontrib>Minor, Andrew M.</creatorcontrib><creatorcontrib>Chrzan, Daryl C.</creatorcontrib><creatorcontrib>Javey, Ali</creatorcontrib><creatorcontrib>Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)</creatorcontrib><title>Oriented Growth of Gold Nanowires on MoS2</title><title>Advanced functional materials</title><addtitle>Adv. Funct. Mater</addtitle><description>Layered 2D materials serve as a new class of substrates for templated synthesis of various nanomaterials even with highly dissimilar crystal structures; thus overcoming the lattice constraints of conventional epitaxial processes. Here, molybdenum disulfide (MoS2) is used as a prototypical model substrate for oriented growth of in‐plane Au nanowires (NWs) despite the nearly 8% lattice mismatch between MoS2 and Au. Au NWs on the MoS2 surface are oriented along three symmetrically equivalent directions within the substrate arising from the strong Au–S binding that templates the oriented growth. The kinetics of the growth process are explored through experiments and modeling. Strong charge transfer is observed between Au NWs and MoS2, resulting in degenerate p‐doping of MoS2.
Au nanowires (NWs) are laterally grown on a 2D material, molybdenum disulfide (MoS2) via treatment with AuCl3 solution. The Au NWs are oriented on the MoS2 surface with C3 symmetry, reflecting the surface of the MoS2 crystal plane. Analysis of the electrical characteristics indicates a surface charge transfer reaction between AuCl3 and MoS2, showing p‐type doping up to the degenerate limit.</description><subject>field effect transistors (FET)</subject><subject>MATERIALS SCIENCE</subject><subject>nanowires</subject><subject>transition metal dichalcogenides</subject><issn>1616-301X</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kElPwzAQRi0EEqVw5Rxx45DiJV5yrAoJSF3EpvZmTWxHNbQxiiOV_ntaFeU0M_q-N4eH0C3BI4IxfQBbb0cUE44pV_QMDYggImWYqvN-J6tLdBXjF8ZESpYN0P2i9a7pnE3KNuy6dRLqpAwbm8yhCTvfupiEJpmFd3qNLmrYRHfzP4fos3j6mDyn00X5MhlPU8-koKnLJReAuaSWmVwqyCDLFVACzEgCygjuRAbVIcootVZxlauqrrlVQKqKsSG6O_0NsfM6Gt85szahaZzpNOGS5JQfSvmptPMbt9c_rd9Cu9cE66MKfVShexV6_FjM-uvApifWx8799iy031pIJrlezkv9Wqz4ciKEfmN_ASFhlw</recordid><startdate>20151021</startdate><enddate>20151021</enddate><creator>Kiriya, Daisuke</creator><creator>Zhou, Yuzhi</creator><creator>Nelson, Christopher</creator><creator>Hettick, Mark</creator><creator>Madhvapathy, Surabhi Rao</creator><creator>Chen, Kevin</creator><creator>Zhao, Peida</creator><creator>Tosun, Mahmut</creator><creator>Minor, Andrew M.</creator><creator>Chrzan, Daryl C.</creator><creator>Javey, Ali</creator><general>Blackwell Publishing Ltd</general><general>Wiley</general><scope>BSCLL</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20151021</creationdate><title>Oriented Growth of Gold Nanowires on MoS2</title><author>Kiriya, Daisuke ; Zhou, Yuzhi ; Nelson, Christopher ; Hettick, Mark ; Madhvapathy, Surabhi Rao ; Chen, Kevin ; Zhao, Peida ; Tosun, Mahmut ; Minor, Andrew M. ; Chrzan, Daryl C. ; Javey, Ali</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i3762-e9756a0572d3c978a4a498a21a3c71a8c65e64ab978422dd85898bff5d8a1bb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>field effect transistors (FET)</topic><topic>MATERIALS SCIENCE</topic><topic>nanowires</topic><topic>transition metal dichalcogenides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kiriya, Daisuke</creatorcontrib><creatorcontrib>Zhou, Yuzhi</creatorcontrib><creatorcontrib>Nelson, Christopher</creatorcontrib><creatorcontrib>Hettick, Mark</creatorcontrib><creatorcontrib>Madhvapathy, Surabhi Rao</creatorcontrib><creatorcontrib>Chen, Kevin</creatorcontrib><creatorcontrib>Zhao, Peida</creatorcontrib><creatorcontrib>Tosun, Mahmut</creatorcontrib><creatorcontrib>Minor, Andrew M.</creatorcontrib><creatorcontrib>Chrzan, Daryl C.</creatorcontrib><creatorcontrib>Javey, Ali</creatorcontrib><creatorcontrib>Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)</creatorcontrib><collection>Istex</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kiriya, Daisuke</au><au>Zhou, Yuzhi</au><au>Nelson, Christopher</au><au>Hettick, Mark</au><au>Madhvapathy, Surabhi Rao</au><au>Chen, Kevin</au><au>Zhao, Peida</au><au>Tosun, Mahmut</au><au>Minor, Andrew M.</au><au>Chrzan, Daryl C.</au><au>Javey, Ali</au><aucorp>Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oriented Growth of Gold Nanowires on MoS2</atitle><jtitle>Advanced functional materials</jtitle><addtitle>Adv. Funct. Mater</addtitle><date>2015-10-21</date><risdate>2015</risdate><volume>25</volume><issue>39</issue><spage>6257</spage><epage>6264</epage><pages>6257-6264</pages><issn>1616-301X</issn><eissn>1616-3028</eissn><abstract>Layered 2D materials serve as a new class of substrates for templated synthesis of various nanomaterials even with highly dissimilar crystal structures; thus overcoming the lattice constraints of conventional epitaxial processes. Here, molybdenum disulfide (MoS2) is used as a prototypical model substrate for oriented growth of in‐plane Au nanowires (NWs) despite the nearly 8% lattice mismatch between MoS2 and Au. Au NWs on the MoS2 surface are oriented along three symmetrically equivalent directions within the substrate arising from the strong Au–S binding that templates the oriented growth. The kinetics of the growth process are explored through experiments and modeling. Strong charge transfer is observed between Au NWs and MoS2, resulting in degenerate p‐doping of MoS2.
Au nanowires (NWs) are laterally grown on a 2D material, molybdenum disulfide (MoS2) via treatment with AuCl3 solution. The Au NWs are oriented on the MoS2 surface with C3 symmetry, reflecting the surface of the MoS2 crystal plane. Analysis of the electrical characteristics indicates a surface charge transfer reaction between AuCl3 and MoS2, showing p‐type doping up to the degenerate limit.</abstract><cop>United States</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/adfm.201502582</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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title | Oriented Growth of Gold Nanowires on MoS2 |
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