Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is...

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Veröffentlicht in:	IEEE transactions on nuclear science 2019-01, Vol.66 (1), p.69-76
Hauptverfasser:	Taggart, J. L., Jacobs-Gedrim, R. B., McLain, M. L., Barnaby, H. J., Bielejec, E. S., Hardy, W., Marinella, M. J., Kozicki, M. N., Holbert, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chalcogenide glass conductive bridging conductive-bridging random access memory (CBRAM) displacement damage (DD) Cycles dose effects electrochemical metallization Environmental effects Failure Fluence Ion bombardment ionizing radiation Ions Irradiation Jupiter Jupiter satellites memristors nanoionic memory Performance evaluation Programming Radiation Radiation effects Random access memory Resistance Silicon Testing total ionizing dose (TID)
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