Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

We report charge transfer and built-in electric fields across the epitaxial SrNb_{x}Ti_{1-x}O_{3-δ}/Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmet...

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Veröffentlicht in:	Physical review letters 2019-07, Vol.123 (2), p.026805-026805, Article 026805
Hauptverfasser:	Lim, Z H, Quackenbush, N F, Penn, A N, Chrysler, M, Bowden, M, Zhu, Z, Ablett, J M, Lee, T-L, LeBeau, J M, Woicik, J C, Sushko, P V, Chambers, S A, Ngai, J H
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge transfer Construction Electric charge Electric fields Heterojunctions Mapping Photoelectrons Silicon
Online-Zugang:	Volltext
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