High-Field Magnetoresistance of Organic Semiconductors

The magnetoelectronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge-carrier pairs due to small differences in their Landé g factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multifrequency continuous-wave electrically detected magnetic-resonance experiments. The measurements are performed on identical devices under similar conditions in order to independently assess the magnetic-field-dependent spin-mixing mechanism, the so-called Δg mechanism. Finally, an understanding of the microscopic origin of magnetoresistance in organic semiconductors is crucial for developing reliable magnetometer devices capable of operating over a broad range of magnetic fields of order 10-7 - 10 T.