Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers

Reliable and controllable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) layers is highly desirable for their applications as 2D dielectric and wide bandgap semiconductors. In this work, we demonstrate that the dissolution of carbon into cobalt (Co) and nickel (Ni) substrates can f...

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Veröffentlicht in:Nano letters 2018-06, Vol.18 (6), p.3352-3361
Hauptverfasser: Tian, Hao, Khanaki, Alireza, Das, Protik, Zheng, Renjing, Cui, Zhenjun, He, Yanwei, Shi, Wenhao, Xu, Zhongguang, Lake, Roger, Liu, Jianlin
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Sprache:eng
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