Characterization of misfit dislocations in Si quantum well structures enabled by STEM based aberration correction

•STEM based Aberration Correction was critical to understanding the core structure of misfit dislocations in Si, confirming a Double Period reconstruction in 90° partial dislocations in Silicon.•Experience with aberration corrected probe forming systems has now been extended to EELS, producing bette...

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Veröffentlicht in:	Ultramicroscopy 2017-09, Vol.180 (C), p.34-40
Hauptverfasser:	Batson, Philip E., Lagos, Maureen J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aberration correction Dislocation structure EELS HAADF Microscopy Misfit dislocations Phonon
Online-Zugang:	Volltext
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