Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection
Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require...
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| Veröffentlicht in: | Applied physics letters 2019-07, Vol.115 (1) |
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| container_title | Applied physics letters |
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| creator | Han, Kevin Ahn, Geun Ho Cho, Joy Lien, Der-Hsien Amani, Matin Desai, Sujay B. Zhang, George Kim, Hyungjin Gupta, Niharika Javey, Ali Wu, Ming C. |
| description | Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes. |
| doi_str_mv | 10.1063/1.5100306 |
| format | Article |
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(LBNL), Berkeley, CA (United States)</creatorcontrib><description>Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5100306</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electroluminescence ; Excitons ; Heterostructures ; High vacuum ; Light emitting diodes ; Light sources ; Monolayers ; Optoelectronics ; Organic light emitting diodes ; P-n junctions ; Photoluminescence ; Quantum efficiency ; Transition metal compounds</subject><ispartof>Applied physics letters, 2019-07, Vol.115 (1)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c455t-bb738e2013eb9e279267059d03d64b37d2a28d18796c1f1d898da702508915f33</citedby><cites>FETCH-LOGICAL-c455t-bb738e2013eb9e279267059d03d64b37d2a28d18796c1f1d898da702508915f33</cites><orcidid>0000-0002-4761-7804 ; 0000-0002-1741-5267 ; 0000-0003-4808-6686 ; 0000-0002-1053-5821 ; 0000-0002-4028-2108 ; 0000-0001-6447-2769 ; 0000000247617804 ; 0000000164472769 ; 0000000348086686 ; 0000000217415267 ; 0000000240282108 ; 0000000210535821</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5100306$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,4498,27901,27902,76353</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1530477$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Han, Kevin</creatorcontrib><creatorcontrib>Ahn, Geun Ho</creatorcontrib><creatorcontrib>Cho, Joy</creatorcontrib><creatorcontrib>Lien, Der-Hsien</creatorcontrib><creatorcontrib>Amani, Matin</creatorcontrib><creatorcontrib>Desai, Sujay B.</creatorcontrib><creatorcontrib>Zhang, George</creatorcontrib><creatorcontrib>Kim, Hyungjin</creatorcontrib><creatorcontrib>Gupta, Niharika</creatorcontrib><creatorcontrib>Javey, Ali</creatorcontrib><creatorcontrib>Wu, Ming C.</creatorcontrib><creatorcontrib>Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)</creatorcontrib><title>Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection</title><title>Applied physics letters</title><description>Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.</description><subject>Applied physics</subject><subject>Electroluminescence</subject><subject>Excitons</subject><subject>Heterostructures</subject><subject>High vacuum</subject><subject>Light emitting diodes</subject><subject>Light sources</subject><subject>Monolayers</subject><subject>Optoelectronics</subject><subject>Organic light emitting diodes</subject><subject>P-n junctions</subject><subject>Photoluminescence</subject><subject>Quantum efficiency</subject><subject>Transition metal compounds</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqdkE9LxDAQxYMouK4e_AZBTwpdM0nTtEdd_AcLHlS8CKFN0t0su0lNWsFvb5YuePc0zOM3b94MQudAZkAKdgMzDoQwUhygCRAhMgZQHqIJSWJWVByO0UmM69RyytgEfd4Fu1z12GyM6oPfDFvrTFTGKYOtw_W2scb1WHmnbW-9i7gNfos_Xg3FXeawtl6biIdo3RJ3wyYanebWySzBp-iorZN0tq9T9P5w_zZ_yhYvj8_z20Wmcs77rGkEKw0lwExTGSoqWgjCK02YLvKGCU1rWmooRVUoaEGXValrQSgnZQW8ZWyKLkZfH3sro7K9UasU2aUYEjgjuRAJuhyhLvivwcRerv0QXMolabKCHATniboaKRV8jMG0sgt2W4cfCUTuPixB7j-c2OuR3W2sdwf_D_724Q-UnW7ZL0oHh9I</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Han, Kevin</creator><creator>Ahn, Geun Ho</creator><creator>Cho, Joy</creator><creator>Lien, Der-Hsien</creator><creator>Amani, Matin</creator><creator>Desai, Sujay B.</creator><creator>Zhang, George</creator><creator>Kim, Hyungjin</creator><creator>Gupta, Niharika</creator><creator>Javey, Ali</creator><creator>Wu, Ming C.</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-4761-7804</orcidid><orcidid>https://orcid.org/0000-0002-1741-5267</orcidid><orcidid>https://orcid.org/0000-0003-4808-6686</orcidid><orcidid>https://orcid.org/0000-0002-1053-5821</orcidid><orcidid>https://orcid.org/0000-0002-4028-2108</orcidid><orcidid>https://orcid.org/0000-0001-6447-2769</orcidid><orcidid>https://orcid.org/0000000247617804</orcidid><orcidid>https://orcid.org/0000000164472769</orcidid><orcidid>https://orcid.org/0000000348086686</orcidid><orcidid>https://orcid.org/0000000217415267</orcidid><orcidid>https://orcid.org/0000000240282108</orcidid><orcidid>https://orcid.org/0000000210535821</orcidid></search><sort><creationdate>20190701</creationdate><title>Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection</title><author>Han, Kevin ; Ahn, Geun Ho ; Cho, Joy ; Lien, Der-Hsien ; Amani, Matin ; Desai, Sujay B. ; Zhang, George ; Kim, Hyungjin ; Gupta, Niharika ; Javey, Ali ; Wu, Ming C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c455t-bb738e2013eb9e279267059d03d64b37d2a28d18796c1f1d898da702508915f33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Electroluminescence</topic><topic>Excitons</topic><topic>Heterostructures</topic><topic>High vacuum</topic><topic>Light emitting diodes</topic><topic>Light sources</topic><topic>Monolayers</topic><topic>Optoelectronics</topic><topic>Organic light emitting diodes</topic><topic>P-n junctions</topic><topic>Photoluminescence</topic><topic>Quantum efficiency</topic><topic>Transition metal compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Kevin</creatorcontrib><creatorcontrib>Ahn, Geun Ho</creatorcontrib><creatorcontrib>Cho, Joy</creatorcontrib><creatorcontrib>Lien, Der-Hsien</creatorcontrib><creatorcontrib>Amani, Matin</creatorcontrib><creatorcontrib>Desai, Sujay B.</creatorcontrib><creatorcontrib>Zhang, George</creatorcontrib><creatorcontrib>Kim, Hyungjin</creatorcontrib><creatorcontrib>Gupta, Niharika</creatorcontrib><creatorcontrib>Javey, Ali</creatorcontrib><creatorcontrib>Wu, Ming C.</creatorcontrib><creatorcontrib>Lawrence Berkeley National Lab. 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(LBNL), Berkeley, CA (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection</atitle><jtitle>Applied physics letters</jtitle><date>2019-07-01</date><risdate>2019</risdate><volume>115</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. 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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Electroluminescence Excitons Heterostructures High vacuum Light emitting diodes Light sources Monolayers Optoelectronics Organic light emitting diodes P-n junctions Photoluminescence Quantum efficiency Transition metal compounds |
| title | Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection |
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