Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron–hole puddles smearing its energy landscape. Here, by developing ultra‐low‐carrier...

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Veröffentlicht in:	Advanced materials (Weinheim) 2019-09, Vol.31 (36), p.e1901091-n/a
Hauptverfasser:	Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung‐Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber‐Gordon, David, Oh, Seongshik
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Galling Materials science quantum Hall effect quantum Hall to insulator transition scaling analysis topological insulator thin‐films Topological insulators zeroth Landau level
Online-Zugang:	Volltext
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