Diagnosis of Factors Impacting Yield in Multilayer Devices for Superconducting Electronics

The ability to localize defects in order to understand failure mechanisms in complex superconducting electronics circuits, while operating at low temperature, does not yet exist. This work applies thermally-induced voltage alteration (TIVA), to a biased superconducting electronics (SCE) circuit at a...

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Veröffentlicht in:IEEE transactions on applied superconductivity 2019-08, Vol.29 (5), p.1-4
Hauptverfasser: Missert, Nancy, Jenkins, Mark W., Tangyunyong, Pai, Mook, William, Vernik, Igor V., Kirichenko, Alex F., Mukhanov, Oleg A., Wynn, Alex, Day, Alexandra L., Bolkhovsky, Vladimir, Johnson, Leonard M.
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container_issue 5
container_start_page 1
container_title IEEE transactions on applied superconductivity
container_volume 29
creator Missert, Nancy
Jenkins, Mark W.
Tangyunyong, Pai
Mook, William
Vernik, Igor V.
Kirichenko, Alex F.
Mukhanov, Oleg A.
Wynn, Alex
Day, Alexandra L.
Bolkhovsky, Vladimir
Johnson, Leonard M.
description The ability to localize defects in order to understand failure mechanisms in complex superconducting electronics circuits, while operating at low temperature, does not yet exist. This work applies thermally-induced voltage alteration (TIVA), to a biased superconducting electronics (SCE) circuit at ambient temperature. TIVA is a commonly used, laser-based failure analysis technique developed for silicon-based microelectronics. The non-operational circuit consisted of an arithmetic logic unit (ALU) in a high-frequency test bed designed at HYPRES and fabricated by MIT Lincoln Laboratory using their SFQ5ee process. Localized TIVA signals were correlated with reflected light images at the surface, and these sites were further investigated by scanning electron microscopy imaging of focused ion-beam cross-sections. The areas investigated, where prominent TIVA signals were observed, showed seams in the Nb wiring layers at contacts to Josephson junctions or inductors and/or disrupted junction morphologies. These results suggest that the TIVA technique can be used at ambient temperature to diagnose fabrication defects that may cause low temperature circuit failure.
doi_str_mv 10.1109/TASC.2019.2908052
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source IEEE Electronic Library (IEL)
subjects Ambient temperature
Circuits
Defects
Electronic devices
Electronics
ENGINEERING
Failure analysis
Failure mechanisms
Induced voltage
Inductors
Ion beams
Josephson junctions
Junctions
Laser applications
Laser transitions
MATERIALS SCIENCE
Measurement by laser beam
Morphology
Multilayers
niobium
Scanning electron microscopy
Seams
Signal processing
superconducting integrated circuits
Superconductivity
Temperature measurement
Wiring
title Diagnosis of Factors Impacting Yield in Multilayer Devices for Superconducting Electronics
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