Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K

Ferroelectricity in doped and alloyed hafnia thin films has been demonstrated using several different electrodes, with TiN and TaN being most prominent. In this work, we demonstrate ferroelectric Hf0.58Zr0.42O2 thin films with superconducting NbN electrodes at cryogenic temperatures. Demonstration o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2019-03, Vol.114 (9)
Hauptverfasser:	Henry, M. D., Smith, S. W., Lewis, R. M., Ihlefeld, J. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Cryogenic engineering Cryogenic temperature Cycles Electric fields Electrode polarization Electrodes Ferroelectric materials Ferroelectricity Hafnium oxide Liquid helium MATERIALS SCIENCE Niobium nitride Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!