Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)

Chemical vapor deposition of CH4 on Ge(001) can enable anisotropic growth of narrow, semiconducting graphene nanoribbons with predominately smooth armchair edges and high-performance charge transport properties. However, such nanoribbons are not aligned in one direction but instead grow perpendicula...

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Veröffentlicht in:	Nanoscale 2019-03, Vol.11 (11), p.4864-4875
Hauptverfasser:	Jacobberger, Robert M, Murray, Ellen A, Fortin-Deschênes, Matthieu, Göltl, Florian, Behn, Wyatt A, Krebs, Zachary J, Levesque, Pierre L, Savage, Donald E, Smoot, Charles, Lagally, Max G, Desjardins, Patrick, Martel, Richard, Brar, Victor, Moutanabbir, Oussama, Mavrikakis, Manos, Arnold, Michael S
Format:	Artikel
Sprache:	eng
Schlagworte:	Alignment Anisotropy Charge transport Chemical vapor deposition Density functional theory Field effect transistors Graphene Nanoribbons Organic chemistry Resistance Semiconductor devices Substrates Transport properties
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