Stacking-Dependent Magnetism in Bilayer CrI3

Stacking-Dependent Magnetism in Bilayer CrI3

We report the connection between the stacking order and magnetic properties of bilayer CrI3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order, one can tune the interlayer exchange interaction between anti...

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Veröffentlicht in:Nano letters 2018-12, Vol.18 (12), p.7658-7664
Hauptverfasser: Sivadas, Nikhil, Okamoto, Satoshi, Xu, Xiaodong, Fennie, Craig. J, Xiao, Di
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CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
MATERIALS SCIENCE
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container_end_page 7664
container_issue 12
container_start_page 7658
container_title Nano letters
container_volume 18
creator Sivadas, Nikhil
Okamoto, Satoshi
Xu, Xiaodong
Fennie, Craig. J
Xiao, Di
description We report the connection between the stacking order and magnetic properties of bilayer CrI3 using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order, one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI3 but also have direct implications in heterostructures made of two-dimensional magnets.
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title Stacking-Dependent Magnetism in Bilayer CrI3
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