A HV silicon vertical JFET: TCAD simulations
In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiat...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2019-03, Vol.919, p.119-124 |
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| container_title | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
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| creator | Giacomini, Gabriele Chen, Wei Lynn, David |
| description | In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high voltages in the OFF state and being able to operate in a high magnetic field. At Brookhaven National Laboratory we conceived a new kind of solid-state switch that can potentially meet all the specs: it is a HV silicon vertical JFET. Before designing and fabricating the JFET, we did a study using numerical TCAD simulations that demonstrate the feasibility of fabricating the device in a standard planar technology. We report such simulations, highlighting in particular a few key parameters to which the JFET performances are most sensitive. |
| doi_str_mv | 10.1016/j.nima.2018.12.046 |
| format | Article |
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| ispartof | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-03, Vol.919, p.119-124 |
| issn | 0168-9002 1872-9576 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1487243 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | High voltage JFET PHYSICS OF ELEMENTARY PARTICLES AND FIELDS Power devices TCAD simulations |
| title | A HV silicon vertical JFET: TCAD simulations |
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