Droop-Free Colloidal Quantum Dot Light-Emitting Diodes
Colloidal semiconductor quantum dots (QDs) are a highly promising materials platform for implementing solution-processable light-emitting diodes (LEDs). They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suit...
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Veröffentlicht in: | Nano letters 2018-10, Vol.18 (10), p.6645-6653 |
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description | Colloidal semiconductor quantum dots (QDs) are a highly promising materials platform for implementing solution-processable light-emitting diodes (LEDs). They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suited for large-area applications such as television screens, solid-state lighting, and outdoor signage. Additional beneficial features include size-controlled emission wavelengths, narrow bandwidths, and nearly perfect emission efficiencies. State-of-the-art QD-LEDs exhibit high internal quantum efficiencies approaching unity. However, these peak values are observed only at low current densities (J) and correspondingly low brightnesses, whereas at higher J, the efficiency usually exhibits a quick roll-off. This efficiency droop limits achievable brightness levels and decreases device longevity due to excessive heat generation. Here, we demonstrate QD-LEDs operating with high internal efficiencies (up to 70%) virtually droop-free up to unprecedented brightness of >100,000 cd m–2 (at ∼500 mA cm–2). This exceptional performance is derived from specially engineered QDs that feature a compositionally graded interlayer and a final barrier layer. This QD design allows for improved balance between electron and hole injections combined with considerably suppressed Auger recombination, which helps mitigate efficiency losses due to charge imbalance at high currents. These results indicate a significant potential of newly developed QDs as enablers of future ultrabright, highly efficient devices for both indoor and outdoor applications. |
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They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suited for large-area applications such as television screens, solid-state lighting, and outdoor signage. Additional beneficial features include size-controlled emission wavelengths, narrow bandwidths, and nearly perfect emission efficiencies. State-of-the-art QD-LEDs exhibit high internal quantum efficiencies approaching unity. However, these peak values are observed only at low current densities (J) and correspondingly low brightnesses, whereas at higher J, the efficiency usually exhibits a quick roll-off. This efficiency droop limits achievable brightness levels and decreases device longevity due to excessive heat generation. Here, we demonstrate QD-LEDs operating with high internal efficiencies (up to 70%) virtually droop-free up to unprecedented brightness of >100,000 cd m–2 (at ∼500 mA cm–2). This exceptional performance is derived from specially engineered QDs that feature a compositionally graded interlayer and a final barrier layer. This QD design allows for improved balance between electron and hole injections combined with considerably suppressed Auger recombination, which helps mitigate efficiency losses due to charge imbalance at high currents. 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They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suited for large-area applications such as television screens, solid-state lighting, and outdoor signage. Additional beneficial features include size-controlled emission wavelengths, narrow bandwidths, and nearly perfect emission efficiencies. State-of-the-art QD-LEDs exhibit high internal quantum efficiencies approaching unity. However, these peak values are observed only at low current densities (J) and correspondingly low brightnesses, whereas at higher J, the efficiency usually exhibits a quick roll-off. This efficiency droop limits achievable brightness levels and decreases device longevity due to excessive heat generation. Here, we demonstrate QD-LEDs operating with high internal efficiencies (up to 70%) virtually droop-free up to unprecedented brightness of >100,000 cd m–2 (at ∼500 mA cm–2). This exceptional performance is derived from specially engineered QDs that feature a compositionally graded interlayer and a final barrier layer. This QD design allows for improved balance between electron and hole injections combined with considerably suppressed Auger recombination, which helps mitigate efficiency losses due to charge imbalance at high currents. These results indicate a significant potential of newly developed QDs as enablers of future ultrabright, highly efficient devices for both indoor and outdoor applications.</description><subject>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</subject><subject>Nanocrystal quantum dots Light emitting diode Droop-free</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kLtOwzAUhi0EoqXwBghFTCwpPrHjOCPqBZAqISSYLcdxW1eJXWJn4O1xlbYj0znD95_Lh9A94CngDJ6l8lMrrWt0CFNeYULz4gKNISc4ZWWZXZ57TkfoxvsdxrgkOb5GI4Kh5BkrxojNO-f26bLTOpm5pnGmlk3y2Usb-jaZu5CszGYb0kVrQjB2k8yNq7W_RVdr2Xh9d6wT9L1cfM3e0tXH6_vsZZVKyouQFjVUJScZqViGFavwOtcMZAUVL1kNqo53YyrrHJgiUmYaqOS85IwxtWaAyQQ9DnOdD0Z4ZYJWW-Ws1SoIoEXBChqhpwHad-6n1z6I1nilm0Za7XovMojvAgAhEaUDqjrnfafXYt-ZVna_ArA4aBVRqzhpFUetMfZw3NBXra7PoZPHCOABOMR3ru9stPL_zD9UWoVM</recordid><startdate>20181010</startdate><enddate>20181010</enddate><creator>Lim, Jaehoon</creator><creator>Park, Young-Shin</creator><creator>Wu, Kaifeng</creator><creator>Yun, Hyeong Jin</creator><creator>Klimov, Victor I</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-1047-6606</orcidid><orcidid>https://orcid.org/0000-0003-2623-3550</orcidid><orcidid>https://orcid.org/0000-0003-4204-1305</orcidid><orcidid>https://orcid.org/0000-0002-8401-8886</orcidid><orcidid>https://orcid.org/0000-0003-1158-3179</orcidid><orcidid>https://orcid.org/0000000311583179</orcidid><orcidid>https://orcid.org/0000000326233550</orcidid><orcidid>https://orcid.org/0000000210476606</orcidid><orcidid>https://orcid.org/0000000284018886</orcidid><orcidid>https://orcid.org/0000000342041305</orcidid></search><sort><creationdate>20181010</creationdate><title>Droop-Free Colloidal Quantum Dot Light-Emitting Diodes</title><author>Lim, Jaehoon ; Park, Young-Shin ; Wu, Kaifeng ; Yun, Hyeong Jin ; Klimov, Victor I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a487t-7d1b98323b620c6b0f5e61ab1b896d1cd8b004ad516c3aa2e14a8898666cf6103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</topic><topic>Nanocrystal quantum dots Light emitting diode Droop-free</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lim, Jaehoon</creatorcontrib><creatorcontrib>Park, Young-Shin</creatorcontrib><creatorcontrib>Wu, Kaifeng</creatorcontrib><creatorcontrib>Yun, Hyeong Jin</creatorcontrib><creatorcontrib>Klimov, Victor I</creatorcontrib><creatorcontrib>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lim, Jaehoon</au><au>Park, Young-Shin</au><au>Wu, Kaifeng</au><au>Yun, Hyeong Jin</au><au>Klimov, Victor I</au><aucorp>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Droop-Free Colloidal Quantum Dot Light-Emitting Diodes</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2018-10-10</date><risdate>2018</risdate><volume>18</volume><issue>10</issue><spage>6645</spage><epage>6653</epage><pages>6645-6653</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Colloidal semiconductor quantum dots (QDs) are a highly promising materials platform for implementing solution-processable light-emitting diodes (LEDs). They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suited for large-area applications such as television screens, solid-state lighting, and outdoor signage. Additional beneficial features include size-controlled emission wavelengths, narrow bandwidths, and nearly perfect emission efficiencies. State-of-the-art QD-LEDs exhibit high internal quantum efficiencies approaching unity. However, these peak values are observed only at low current densities (J) and correspondingly low brightnesses, whereas at higher J, the efficiency usually exhibits a quick roll-off. This efficiency droop limits achievable brightness levels and decreases device longevity due to excessive heat generation. Here, we demonstrate QD-LEDs operating with high internal efficiencies (up to 70%) virtually droop-free up to unprecedented brightness of >100,000 cd m–2 (at ∼500 mA cm–2). This exceptional performance is derived from specially engineered QDs that feature a compositionally graded interlayer and a final barrier layer. This QD design allows for improved balance between electron and hole injections combined with considerably suppressed Auger recombination, which helps mitigate efficiency losses due to charge imbalance at high currents. These results indicate a significant potential of newly developed QDs as enablers of future ultrabright, highly efficient devices for both indoor and outdoor applications.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>30198267</pmid><doi>10.1021/acs.nanolett.8b03457</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-1047-6606</orcidid><orcidid>https://orcid.org/0000-0003-2623-3550</orcidid><orcidid>https://orcid.org/0000-0003-4204-1305</orcidid><orcidid>https://orcid.org/0000-0002-8401-8886</orcidid><orcidid>https://orcid.org/0000-0003-1158-3179</orcidid><orcidid>https://orcid.org/0000000311583179</orcidid><orcidid>https://orcid.org/0000000326233550</orcidid><orcidid>https://orcid.org/0000000210476606</orcidid><orcidid>https://orcid.org/0000000284018886</orcidid><orcidid>https://orcid.org/0000000342041305</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY Nanocrystal quantum dots Light emitting diode Droop-free |
title | Droop-Free Colloidal Quantum Dot Light-Emitting Diodes |
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