Grain boundary dominated charge transport in Mg3Sb2-based compounds
Thermally activated mobility near room temperature is a signature of detrimental scattering that limits the efficiency and figure-of-merit zT in thermoelectric semiconductors. This effect has been observed dramatically in Mg3Sb2-based compounds, but also to a lesser extent in other thermoelectric co...
Gespeichert in:
Veröffentlicht in: | Energy & environmental science 2018-01, Vol.11 (2), p.429-434 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!