Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements

The charge carrier transport mechanism of passivating contacts which feature an ultra-thin oxide layer is investigated by studying temperature-dependent current-voltage characteristics. 4-Terminal dark J-V measurements at low temperatures reveal non-linear J-V characteristics of passivating contacts...

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Veröffentlicht in:	Solar energy materials and solar cells 2018-05, Vol.178, p.15-19
Hauptverfasser:	Feldmann, Frank, Nogay, Gizem, Löper, Philipp, Young, David L., Lee, Benjamin G., Stradins, Paul, Hermle, Martin, Glunz, Stefan W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier transport Charge transport Contact resistance Current carriers Energy charge Insulators Low temperature MATERIALS SCIENCE MIS (semiconductors) Passivating contacts Photovoltaic cells Poly-Si Quantum mechanical tunneling Silicon Silicon oxide Silicon oxides Solar cells SOLAR ENERGY Studies Temperature Temperature dependence Temperature effects Thermionic emission TOPCon
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