Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors
When an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the sili...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 2017-11, Vol.64 (11), p.2883-2890 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2890 |
|---|---|
| container_issue | 11 |
| container_start_page | 2883 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 64 |
| creator | Giacomini, Gabriele Huber, Alan Redus, Robert Rescia, Sergio |
| description | When an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. We explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extension of Ramo theorem. |
| doi_str_mv | 10.1109/TNS.2017.2762959 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_osti_scitechconnect_1424951</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8067529</ieee_id><sourcerecordid>1966142837</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-2e3777a8dca83e29daed518d87bebebce5901c33e5ca11d03522b299865253c03</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wUvQ89Z8NJvkKFo_oFphK3oL2-y0TW03a7KL9N-b0iJzGIZ5ZuadF6FLSgaUEn07fSsGjFA5YDJnWugj1KNCqIwKqY5RjxCqMj3U-hSdxbhK5VAQ0UNfk-AWrsZ-jsf-NxvVEBZbXDRdcL6L-B3K74hTv2jAtsFH6xtn8SuUsQuwgbqN-NO1S1y4tbO-xg_QJtCHeI5O5uU6wsUh99HH42h6_5yNJ08v93fjzPKctBkDLqUsVWVLxYHpqoRKUFUpOYMUFoQm1HIOwpaUVoQLxmZMa5ULJrglvI-u93t9bJ2J1qX7y6SkTjIMHbKhFjRBN3uoCf6ng9iale9CnXQZqvM8YYrLRJE9ZdOjMcDcNMFtyrA1lJidySaZbHYmm4PJaeRqP-IA4B9XJJeCaf4HifZ4DQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1966142837</pqid></control><display><type>article</type><title>Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors</title><source>IEEE Electronic Library (IEL)</source><creator>Giacomini, Gabriele ; Huber, Alan ; Redus, Robert ; Rescia, Sergio</creator><creatorcontrib>Giacomini, Gabriele ; Huber, Alan ; Redus, Robert ; Rescia, Sergio ; Brookhaven National Laboratory (BNL), Upton, NY (United States)</creatorcontrib><description>When an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. We explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extension of Ramo theorem.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2017.2762959</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Cathodes ; Charge carrier processes ; Crosstalk ; Electrodes ; Floating ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; PIN photodiodes ; Polarity ; Ramo theorem ; signal formation ; Silicon ; silicon radiation ; silicon radiation detectors ; X ray sources ; X-ray spectroscopy</subject><ispartof>IEEE transactions on nuclear science, 2017-11, Vol.64 (11), p.2883-2890</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-2e3777a8dca83e29daed518d87bebebce5901c33e5ca11d03522b299865253c03</citedby><cites>FETCH-LOGICAL-c360t-2e3777a8dca83e29daed518d87bebebce5901c33e5ca11d03522b299865253c03</cites><orcidid>0000-0002-0071-0841 ; 0000-0003-2411-8903 ; 0000000324118903 ; 0000000200710841</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8067529$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8067529$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/servlets/purl/1424951$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Giacomini, Gabriele</creatorcontrib><creatorcontrib>Huber, Alan</creatorcontrib><creatorcontrib>Redus, Robert</creatorcontrib><creatorcontrib>Rescia, Sergio</creatorcontrib><creatorcontrib>Brookhaven National Laboratory (BNL), Upton, NY (United States)</creatorcontrib><title>Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>When an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. We explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extension of Ramo theorem.</description><subject>Capacitance</subject><subject>Cathodes</subject><subject>Charge carrier processes</subject><subject>Crosstalk</subject><subject>Electrodes</subject><subject>Floating</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>PIN photodiodes</subject><subject>Polarity</subject><subject>Ramo theorem</subject><subject>signal formation</subject><subject>Silicon</subject><subject>silicon radiation</subject><subject>silicon radiation detectors</subject><subject>X ray sources</subject><subject>X-ray spectroscopy</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wUvQ89Z8NJvkKFo_oFphK3oL2-y0TW03a7KL9N-b0iJzGIZ5ZuadF6FLSgaUEn07fSsGjFA5YDJnWugj1KNCqIwKqY5RjxCqMj3U-hSdxbhK5VAQ0UNfk-AWrsZ-jsf-NxvVEBZbXDRdcL6L-B3K74hTv2jAtsFH6xtn8SuUsQuwgbqN-NO1S1y4tbO-xg_QJtCHeI5O5uU6wsUh99HH42h6_5yNJ08v93fjzPKctBkDLqUsVWVLxYHpqoRKUFUpOYMUFoQm1HIOwpaUVoQLxmZMa5ULJrglvI-u93t9bJ2J1qX7y6SkTjIMHbKhFjRBN3uoCf6ng9iale9CnXQZqvM8YYrLRJE9ZdOjMcDcNMFtyrA1lJidySaZbHYmm4PJaeRqP-IA4B9XJJeCaf4HifZ4DQ</recordid><startdate>20171101</startdate><enddate>20171101</enddate><creator>Giacomini, Gabriele</creator><creator>Huber, Alan</creator><creator>Redus, Robert</creator><creator>Rescia, Sergio</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-0071-0841</orcidid><orcidid>https://orcid.org/0000-0003-2411-8903</orcidid><orcidid>https://orcid.org/0000000324118903</orcidid><orcidid>https://orcid.org/0000000200710841</orcidid></search><sort><creationdate>20171101</creationdate><title>Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors</title><author>Giacomini, Gabriele ; Huber, Alan ; Redus, Robert ; Rescia, Sergio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-2e3777a8dca83e29daed518d87bebebce5901c33e5ca11d03522b299865253c03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Capacitance</topic><topic>Cathodes</topic><topic>Charge carrier processes</topic><topic>Crosstalk</topic><topic>Electrodes</topic><topic>Floating</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>PIN photodiodes</topic><topic>Polarity</topic><topic>Ramo theorem</topic><topic>signal formation</topic><topic>Silicon</topic><topic>silicon radiation</topic><topic>silicon radiation detectors</topic><topic>X ray sources</topic><topic>X-ray spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Giacomini, Gabriele</creatorcontrib><creatorcontrib>Huber, Alan</creatorcontrib><creatorcontrib>Redus, Robert</creatorcontrib><creatorcontrib>Rescia, Sergio</creatorcontrib><creatorcontrib>Brookhaven National Laboratory (BNL), Upton, NY (United States)</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Giacomini, Gabriele</au><au>Huber, Alan</au><au>Redus, Robert</au><au>Rescia, Sergio</au><aucorp>Brookhaven National Laboratory (BNL), Upton, NY (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2017-11-01</date><risdate>2017</risdate><volume>64</volume><issue>11</issue><spage>2883</spage><epage>2890</epage><pages>2883-2890</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>When an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. We explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extension of Ramo theorem.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2017.2762959</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-0071-0841</orcidid><orcidid>https://orcid.org/0000-0003-2411-8903</orcidid><orcidid>https://orcid.org/0000000324118903</orcidid><orcidid>https://orcid.org/0000000200710841</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2017-11, Vol.64 (11), p.2883-2890 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1424951 |
| source | IEEE Electronic Library (IEL) |
| subjects | Capacitance Cathodes Charge carrier processes Crosstalk Electrodes Floating INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY PIN photodiodes Polarity Ramo theorem signal formation Silicon silicon radiation silicon radiation detectors X ray sources X-ray spectroscopy |
| title | Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T11%3A46%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Origin%20of%20Low-Energy%20Spurious%20Peaks%20in%20Spectroscopic%20Measurements%20With%20Silicon%20Detectors&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Giacomini,%20Gabriele&rft.aucorp=Brookhaven%20National%20Laboratory%20(BNL),%20Upton,%20NY%20(United%20States)&rft.date=2017-11-01&rft.volume=64&rft.issue=11&rft.spage=2883&rft.epage=2890&rft.pages=2883-2890&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2017.2762959&rft_dat=%3Cproquest_RIE%3E1966142837%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1966142837&rft_id=info:pmid/&rft_ieee_id=8067529&rfr_iscdi=true |