Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capt...

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Veröffentlicht in:	Journal of applied physics 2015-01, Vol.117 (4)
Hauptverfasser:	Wampler, William R., Myers, Samuel M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Arsenides Binary codes Carrier recombination Cascades Clustering Collision dynamics Correlation analysis Current carriers Defects Density functional theory Displacement Energetic particles Function analysis Gallium arsenide Heterojunction bipolar transistors Intermetallic compounds Ion irradiation Ion recombination Mathematical models Migration Radiation damage Semiconductor devices Spatial distribution
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