Quasi-two-dimensional thermoelectricity in SnSe
Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectro...
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| Veröffentlicht in: | Physical review. B 2018-01, Vol.97 (4), Article 045424 |
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| container_title | Physical review. B |
| container_volume | 97 |
| creator | Tayari, V. Senkovskiy, B. V. Rybkovskiy, D. Ehlen, N. Fedorov, A. Chen, C.-Y. Avila, J. Asensio, M. Perucchi, A. di Pietro, P. Yashina, L. Fakih, I. Hemsworth, N. Petrescu, M. Gervais, G. Grüneis, A. Szkopek, T. |
| description | Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250cm2/Vs at T=1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications. |
| doi_str_mv | 10.1103/PhysRevB.97.045424 |
| format | Article |
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V. ; Rybkovskiy, D. ; Ehlen, N. ; Fedorov, A. ; Chen, C.-Y. ; Avila, J. ; Asensio, M. ; Perucchi, A. ; di Pietro, P. ; Yashina, L. ; Fakih, I. ; Hemsworth, N. ; Petrescu, M. ; Gervais, G. ; Grüneis, A. ; Szkopek, T.</creator><creatorcontrib>Tayari, V. ; Senkovskiy, B. V. ; Rybkovskiy, D. ; Ehlen, N. ; Fedorov, A. ; Chen, C.-Y. ; Avila, J. ; Asensio, M. ; Perucchi, A. ; di Pietro, P. ; Yashina, L. ; Fakih, I. ; Hemsworth, N. ; Petrescu, M. ; Gervais, G. ; Grüneis, A. ; Szkopek, T.</creatorcontrib><description>Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250cm2/Vs at T=1.3K. 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B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tayari, V.</au><au>Senkovskiy, B. V.</au><au>Rybkovskiy, D.</au><au>Ehlen, N.</au><au>Fedorov, A.</au><au>Chen, C.-Y.</au><au>Avila, J.</au><au>Asensio, M.</au><au>Perucchi, A.</au><au>di Pietro, P.</au><au>Yashina, L.</au><au>Fakih, I.</au><au>Hemsworth, N.</au><au>Petrescu, M.</au><au>Gervais, G.</au><au>Grüneis, A.</au><au>Szkopek, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quasi-two-dimensional thermoelectricity in SnSe</atitle><jtitle>Physical review. B</jtitle><date>2018-01-24</date><risdate>2018</risdate><volume>97</volume><issue>4</issue><artnum>045424</artnum><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250cm2/Vs at T=1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.</abstract><cop>College Park</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.97.045424</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Carrier density Optical reflection Photoelectric emission Seebeck effect Semiconductor devices Spectrum analysis Thermoelectric materials Thermoelectricity Tin selenide Transistors |
| title | Quasi-two-dimensional thermoelectricity in SnSe |
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